忆阻器测试方法及其触发器应用研究

发布时间：2018-05-08 05:47

本文选题：忆阻器 + 测试方法　；参考：《华中科技大学》2014年硕士论文

【摘要】：忆阻器是继电阻、电感、电容之外的第四种基本元器件，它的问世震惊了国际电子技术界。忆阻器是具有记忆功能的新型非线性电阻，其阻值能随电荷流经的方向和数量发生相应变化，从而记忆住每时每刻流经的电荷量。当不再有电荷流经时，阻值能保持不变。因此，忆阻器作为具有非线性动态阻变特性、高速、低功耗、高集成度、存储与计算融合功能的新型电子器件，，研究其测试表征方法以及在触发器电路方面的应用对丰富现有电路、信息存储与逻辑计算及其融合、类脑功能器件等领域具有重大的意义。本文首先从忆阻器直流特性、交流特性与脉冲特性出发，重点研究了忆阻器性能表征手段和器件测试方法，并搭建了忆阻器电学特性测试系统，包括常规测试系统和高速测试系统。设计高速接口电路板，搭建忆阻器高速测试装置并设计其控制程序，解决忆阻器高速测试中的信号完整性问题，保证高速皮秒信号的可靠传输与施加。同时，按照本研究的测试方法和通过所搭建的测试系统对基于硫系化合物忆阻器件的性能进行了测试分析。测试结果验证了上述忆阻器测试方法的可行性和所搭建测试系统的可靠性，并实现了基于AgInSbTe忆阻器的快速阻变。本文还对基于边界迁移理论的忆阻器单元进行SPICE建模，并仿真、分析其忆阻特性。设计了基于忆阻器的具有非挥发特性的D锁存器和触发器电路，并通过电路仿真进行功能验证。以上研究对于忆阻器在信息存储与逻辑计算领域的发展具有一定的促进作用。
[Abstract]:Memory resistor is a new type of electronic device with memory function , its resistance value can change with the direction and quantity of charge flow , so as to memory the quantity of charge flowing through every moment . Therefore , memristors are used as new electronic devices with nonlinear dynamic impedance - resistance characteristic , high - speed , low - power consumption , high integration , storage and calculation fusion function .

Based on the direct current characteristics , AC characteristics and pulse characteristics of memristors , the performance characterization methods and device testing methods of memstors are studied , and the electrical characteristics testing system of memristors is built , including the conventional test system and the high - speed test system . The test method of this study and the test system are designed to analyze the signal integrity of the memristors . The test results verify the feasibility of the test method and the reliability of the test system .

In this paper , a memter unit based on boundary migration theory is modeled and simulated to analyze its memory memristics . A D - latch and flip - flop circuit with non - volatile characteristics based on memristors are designed , and functional verification is carried out by circuit simulation .

The above research has certain promotion effect on the development of memristors in the field of information storage and logic calculation .

【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM13

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