对砂浆切设备改造后生产金刚切硅片的研究

发布时间：2018-05-19 19:09

本文选题：金刚石切割 + 制绒　；参考：《大连理工大学》2015年硕士论文

【摘要】：随着太阳能电池技术发展的深入,单晶硅太阳能电池实验室转换效率进展明显,但在工业生产中单晶硅太阳能电池转换效率与太阳能电池实验室转换效率差异较大。为了适应大规模工业生产,人们对硅片的切割方式上进行改变,采用金刚石线切割进行硅片的生产,但金刚石线锯切割设备昂贵,并且由于硅片切割表面应力较大,碎片较严重,采用传统电池制造工艺制绒效果不好,电池片转换效率提升不明显,本文提出了适合大规模工业生产的设备改造方法,并提出相关生产工艺参数,对改造后的设备生产的金刚切硅片进行研究。通过对传统砂浆切设备改造及生产工艺进行调整,利用树脂金刚线生产金刚切单晶硅片,与金刚切专用设备生产的硅片进行数据对比,结果表明采用生产工艺优化后的改造设备生产的金刚切硅片,在硅片厚度、TTV、碎片率上比金刚切专用设备生产的硅片有优势；同时与传统砂浆切单晶硅片进行表面形貌特征,表面损伤层方面的对比分析,得出金刚切硅片表面存在切割线痕,而砂浆切硅片表面无明显切割线痕,在扫描电子显微镜的观测下,金刚切硅片表面损伤层比砂浆切硅片表面最小损伤层小7μ m,同时由于金刚切硅片表面存在相对光滑区域,金刚切硅片在全光谱范围内的的反射率要高于砂浆切硅片反射率。由于金刚切硅片表面损伤层较小,在制绒过程中腐蚀难度很大,采用传统制绒工艺金刚切硅片并不能形成较好的表面金字塔结构,制绒完成后的反射率要高于砂浆切硅片。我们对金刚切硅片的制绒工艺进行了研究优化,对制绒后的反射率以及金字塔表面形貌进行了测试,得到了一个最优的制绒方案,金刚切硅片优化制绒方案后得到的反射率要低于砂浆切硅片的反射率。我们分别利用金刚切制绒硅片以及砂浆切硅片制备了各一千张的电池片,并且对电池片的电学性能进行了测试分析,金刚切电池片在开路电压、短路电流都稍有提升,在最终的效率上比砂浆切电池片高0.17%。
[Abstract]:With the development of solar cell technology, the conversion efficiency of monocrystalline silicon solar cell laboratory has made great progress, but the conversion efficiency of single crystal silicon solar cell is quite different from that of solar cell laboratory in industrial production. In order to adapt to large-scale industrial production, people change the cutting mode of silicon wafer, and adopt diamond wire cutting to produce silicon wafer. But diamond wire saw cutting equipment is expensive, and because of the high surface stress of silicon chip cutting, The debris is serious, the effect of making pile by traditional battery manufacturing process is not good, and the conversion efficiency of battery chip is not obvious. This paper puts forward the method of equipment transformation suitable for large-scale industrial production, and puts forward the relevant production process parameters. The research on the silicon chip produced by the modified equipment was carried out. Through the modification of the traditional mortar cutting equipment and the adjustment of the production technology, the single crystal silicon wafer was produced by using resin diamond wire, and the data was compared with the silicon chip produced by the special equipment. The results show that the chip produced by the modified equipment with optimized production process has advantages over that produced by the special equipment of diamond cutting in the thickness of silicon wafer TTV, and the surface morphology characteristics of single crystal silicon wafer cut with traditional mortar. By comparing and analyzing the surface damage layer, it is concluded that there are cutting line marks on the surface of the diamond cut silicon wafer, while there is no obvious cut line mark on the surface of the mortar cut silicon wafer, which is observed by the scanning electron microscope. The surface damage layer is 7 渭 m smaller than the minimum damage layer on the surface of mortar cut silicon wafer. At the same time, due to the relatively smooth area on the surface of the diamond cut silicon wafer, the reflectivity of the diamond cut silicon wafer in the whole spectrum range is higher than that of the mortar cut silicon wafer. Due to the small damage layer on the surface of the wafer, it is very difficult to corrode in the process of making velvet. The traditional technology of making silicon wafer can not form a better surface pyramid structure, and the reflectivity of the finished velvet is higher than that of the silicon chip cut by mortar. We have studied and optimized the velvet making process of the silicon wafer, tested the reflectivity and the surface morphology of the pyramid, and got an optimal velvet making scheme. The reflectivity of silicon chip is lower than that of mortar cutting silicon chip. We prepared a thousand battery-chips each by using the diamond chip and the mortar chip, and tested and analyzed the electrical properties of the battery chip. The open-circuit voltage and short-circuit current of the chip were all slightly improved. The final efficiency is 0.17% higher than the mortar cut battery chip.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TM914.4

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