忆阻器可变电阻模型的改进与并联忆阻器量化电路设计

发布时间：2018-05-23 14:20

  本文选题：忆阻器 + 量化电路　； 参考：《国防科学技术大学》2014年硕士论文

【摘要】：忆阻器作为新出现的第四种基本电路元件,将会带来传统电子电路的巨大变革。忆阻器的模型研究是忆阻器应用研究的基础。ADC(Analog to Digital Converter)中的量化电路是能够利用忆阻器改进的重要电路之一。提出了一种忆阻器可变电阻模型的改进,将忆阻器的氧空缺数目和横截面积纳入可变电阻模型的模型构建中。利用SPICE模型进行了计算机仿真,结果证明模型的改进与对忆阻器的阻抗变化分析相一致。设计了一种并联忆阻器量化电路,提出了基于忆阻器并联的量化电路结构,描述了量化过程,并优化了量化结果读取方法。该并联忆阻器量化电路理论上能够进行高速率高精度的量化转换,在模数转换速率、功耗和体积等方面均优于Y.V.忆阻器量化电路。通过计算机仿真证实了设计的可行性。
[Abstract]:The memristor, as a new fourth basic circuit element, will bring about great changes in the traditional electronic circuits. The model study of the memristor is one of the important circuits that can be improved by the memristor in the memristor application research base.ADC (Analog to Digital Converter). A kind of memristor variable resistance is proposed. The model is improved. The number of oxygen vacancies and the cross section area of the memristor are incorporated into the model of the variable resistance model. The computer simulation is carried out with the SPICE model. The results show that the improvement of the model is consistent with the impedance change analysis of the memristor. A parallel memory resistor quantizing circuit is designed and the amount of parallel connection based on the memristor is proposed. The structure of the circuit describes the quantization process and optimizes the method of reading the quantized result. The parallel memristor quantization circuit can carry out the high speed and high precision quantization conversion in theory. It is superior to the Y.V. memristor quantization circuit in the analog to digital conversion rate, power consumption and volume. The feasibility of the design is verified by computer simulation.
【学位授予单位】：国防科学技术大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM502
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本文编号：1925120