硅纳米线异质结及有机杂化太阳能电池制备和性能研究

发布时间：2018-06-15 12:53

本文选题：硅纳米线阵列 + PECVD　；参考：《常州大学》2014年硕士论文

【摘要】：硅纳米线(SiNW)具有优异的陷光特性,可以增加光的吸收，用核壳结构设计径向p-n结可以增加载流子的收集，因此硅纳米线径向p-n结太阳电池有非常广阔的发展前景，是目前光伏领域研究的热点之一。本论文利用金属辅助化学刻蚀(MACE)法制备了硅纳米线阵列，研究了制备条件对其结构参数及减反性能的影响；并在此基础上制备了Ag/AZO/(n+)/(i)/c-Si (p) NW阵列太阳能电池和硅纳米线/聚(3,4-亚乙二氧基噻吩)-聚(苯乙烯磺酸)(SiNWs/PEDOT:PSS)杂化太阳能电池，讨论分析了制备工艺对两种结构硅纳米线太阳电池性能的影响。主要取得以下成果： 1、系统研究金属辅助化学刻蚀工艺条件对制备的硅纳米线阵列的形貌和陷光效果的影响，如刻蚀溶液中AgNO3浓度和刻蚀时间等，，当AgNO3的浓度为0.02mol/L、刻蚀时间为10min时制备出反射率最低的硅纳米线阵列，其在300-1100nm波长范围内的平均反射率仅为2.5%。 2、利用等离子体化学气相沉积（PECVD）法在硅纳米线阵列表面沉积了α-Si:H钝化层，研究了等离子体功率和沉积时间对硅纳米线阵列表面钝化的影响。并制备了硅纳米线太阳电池，研究了α-Si:H钝化工艺对电池性能的影响，在长度为0.51μm的硅纳米线上利用15W的等离子体功率沉积30min α-Si:H钝化层，得到的开路电压达到最大的0.50V。 3、利用PECVD法制备了具有不同微结构的n型Si:H层，并在n型Si:H和AZO之间沉积了一层超薄的Al2O3层，制备出AZO/Si:H(n)/a-Si:H/c-Si(p)径向结构的硅纳米线阵列太阳能电池。当n型Si:H层的相从非晶态转变为两相结构时，短路电流密度增加了16.2%。当Al2O3厚度为0.77nm时，短路电路密度和光电转换效率分别增大了10.2%和6.8%。 4、利用旋涂的方法在硅纳米线上制备了SiNWs/PEDOT:PSS杂化太阳电池，初步研究了硅纳米线与PEDOT:PSS的接触、PEDOT:PSS的退火方式及载流子收集层对电池性能的影响。制备出了转化效率为0.24%的杂化太阳电池，虽然目前制备出的电池效率较低，但所获的结论对未来获得高效率的杂化太阳电池有一定的参考价值。
[Abstract]:Silicon nanowires (SiNW) have excellent trapping characteristics, which can increase the absorption of light. The design of radial p-n junction with core-shell structure can increase the collection of carriers, so the silicon nanowire radial p-n junction solar cells have a very broad development prospect. It is one of the hotspots in the field of photovoltaic. In this paper, silicon nanowire arrays were prepared by metal assisted chemical etching (MACEE) method. The effects of preparation conditions on their structural parameters and anti-reflection properties were studied. On this basis, we have prepared Ag- / AZO / c-Si / NW array solar cells and silicon nanowire / poly (3-ethoxythiophene) -poly (styrene sulfonate / SiNWsPEDOT: PSSs) hybrid solar cells. The effect of preparation process on the performance of two kinds of silicon nanowire solar cells was discussed. The main achievements are as follows: 1. The effects of metal-assisted chemical etching conditions on the morphology and trapping effect of fabricated silicon nanowire arrays, such as Agno _ 3 concentration in etching solution and etching time, were studied systematically. When the concentration of Agno _ 3 is 0.02 mol / L and the etching time is 10min, a silicon nanowire array with the lowest reflectivity is prepared. The average reflectivity in the range of 300-1100nm wavelength is only 2.5 and 2.2.The 伪 -Si: h passivated layer was deposited on the surface of silicon nanowire array by plasma chemical vapor deposition (PECVD) method. The effects of plasma power and deposition time on surface passivation of silicon nanowire arrays were investigated. The effect of 伪 -Si: h passivation process on the performance of silicon nanowire solar cells was investigated. The 30min 伪 -Si: h passivated layer was deposited on silicon nanowires with a length of 0.51 渭 m by using 15W plasma power. The maximum open circuit voltage of 0.50V.3 was obtained. N type Si: h layer with different microstructures was prepared by PECVD method, and an ultrathin Al 2O 3 layer was deposited between n type Si: h and AZO. The silicon nanowire array solar cells with radial structure of AZO / Si / Si: n / a-Si: h / c-Sip have been prepared. The short-circuit current density increases by 16.2when the phase of n-type Si: h layer changes from amorphous to two-phase structure. When the thickness of Al _ 2O _ 3 is 0.77nm, the short-circuit density and photoelectric conversion efficiency increase by 10.2% and 6.8%, respectively. SiNWs / PEDOT: PSS hybrid solar cells are fabricated on silicon nanowires by spin-coating method. The contact of silicon nanowires with PEDOT: PSS and the effect of carrier collection layer on the performance of the battery were studied. A hybrid solar cell with a conversion efficiency of 0.24% was prepared. Although the efficiency of the hybrid solar cell is relatively low at present, the conclusions obtained are of certain reference value for obtaining high efficiency hybrid solar cells in the future.
【学位授予单位】：常州大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM914.4

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