忆阻器读写电路的设计

发布时间：2018-06-25 14:52

本文选题：忆阻器 + 建模　；参考：《武汉科技大学》2014年硕士论文

【摘要】：随着蔡少棠提出了忆阻器的概念以后，忆阻器被认为是除电阻器、电容器、电感器外的第四种基本电路元件，它描述了电路理论中磁通量φ和电荷量q之间的关系。在随后一段时间里忆阻器的研究没有太大的进展，直到2008年HP实验室制出了忆阻器实物才证实了蔡少棠的这一基本理论。因为忆阻器具有纳米级尺寸及记忆功能，在忆阻器模型分析、基础电路分析、电子元件设计、集成电路以及神经网络等方面得到了研究学者的关注，使得忆阻器具有广阔的应用前景。本文详细分析了忆阻器的特性、工作原理，推导了荷控忆阻器及磁控忆阻器的模型。在此基础上提出了一种荷控忆阻器的理论模型。然后对该模型进行了SPICE电路仿真，仿真结果和惠普实验室给出的忆阻器物理模型的特性曲线一致，相比于Hyongsuk Kim所提出的忆阻器模型，改进的忆阻器模型的优势在于Ro n、Ro ff的范围可调、等效离子迁移速率‖可调。然后，，本文研究了荷控忆阻器的电荷特性和频率特性，根据忆阻器的电荷特性和频率特性研究了读取忆阻器阻值的方法。在此基础上，设计了两种忆阻器阻值的写入电路：一种是基于开关转换的忆阻器阻值的写入电路，另一种是一个反馈式的忆阻器阻值写入电路。该忆阻器阻值写入电路由忆阻器、运算放大器、电压跟随器、单相半波整滤波电路和求差电路组成，通过高频信号上加载低频信号来实现忆阻器阻值的高精度写入。经过SPICE仿真实验的验证，该电路成功地实现了忆阻器阻值的高精度写入功能。仿真结果验证了设计的正确性。
[Abstract]:After Cai Shaotang put forward the concept of resistor, it is considered as the fourth basic circuit element besides resistor, capacitor and inductor. It describes the relationship between magnetic flux 蠁 and charge quantity Q in circuit theory. In the following period of time, the research on the resistive device did not make much progress until 2008 when HP Labs produced the object of the resistive device to prove the basic theory of Cai Shao-tong. Because the device has nanometer size and memory function, it has attracted the attention of researchers in the fields of model analysis, basic circuit analysis, electronic component design, integrated circuit and neural network, etc. So that the amnesia device has a broad application prospects. In this paper, the characteristics and working principle of the resistor are analyzed in detail, and the models of the charge controlled resistor and the magnetic controlled resistor are derived. On this basis, a theoretical model of charge-controlled resistor is proposed. The simulation results are consistent with the characteristic curve of the physical model, compared with the model proposed by Hyongsuk Kim, the simulation results are consistent with that of the physical model proposed by Hewlett-Packard Labs, and the simulation results are consistent with that of the physical model of the device, which is proposed by Hyongsuk Kim. The advantage of the improved model lies in the adjustable range of Ro _ (nn) _ (ff) and the adjustable equivalent ion migration rate. Then, the charge characteristics and frequency characteristics of the charge controlled resistor are studied, and the method of reading the resistor resistance is studied according to the charge characteristic and frequency characteristic of the resistor. On the basis of this, two kinds of writing circuits are designed: one is based on switch conversion, the other is a feedback circuit. The circuit consists of a resistor, an operational amplifier, a voltage follower, a single-phase half-wave integrated filter circuit and a differential circuit. The high precision writing of the resistor resistance is realized by loading low-frequency signals on the high frequency signals. The circuit is verified by spice simulation experiment, and the high precision writing function of resistive resistor is realized successfully. The simulation results verify the correctness of the design.
【学位授予单位】：武汉科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM13

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