Cl掺杂对氧化亚铜薄膜载流子浓度及寿命的影响

发布时间：2018-07-09 10:08

本文选题：电化学掺杂 + Cu_O薄膜　；参考：《人工晶体学报》2015年11期

【摘要】：采用三电极体系在硫酸铜-乳酸体系中电化学沉积法制备Cl∶Cu_2O薄膜,通过光电流(I-t)测试、莫特-肖特基(M-s)曲线测试、光电压衰减测试(V-t),研究Cl离子掺杂对氧化亚铜薄膜性能产生的影响。结果表明当p H值为8.5时,可以获得n型氧化亚铜。随着CuCl_2的加入,氧化亚铜薄膜的光电流密度先上升后下降。莫特-肖特基曲线测试的载流子浓度与光电流密度的趋势一致,当Cu Cl2为40 mmol/L时达到最高值,光电流密度为0.11 m A/cm2(较纯氧化亚铜提高了247.6%),载流子浓度为3.58×10~(19)cm~(-3)(较纯氧化亚铜的载流子浓度提高了2457%)。将光电压衰减测试结果进行拟合后发现在40 mmol/L Cu Cl_2溶液中得到的薄膜,其载流子的半衰期提高到了8.92 s,说明较纯氧化亚铜薄膜的光稳定性大大提高了。
[Abstract]:The Cl _ (1) Cu _ 2O thin films were prepared by electrochemical deposition in the system of cupric sulfate and lactic acid with three-electrode system. The photocurrent (I-t) and Mott-Schottky (M-s) curves were measured. The effect of Cl doping on the properties of cuprous oxide thin films was investigated by photovoltage attenuation test (V-t). The results show that n-type cuprous oxide can be obtained when pH is 8.5. With the addition of CuCl2, the photocurrent density of cuprous oxide films first increases and then decreases. The carrier concentration measured by the Mott-Schottky curve is consistent with the trend of photocurrent density, reaching the maximum when Cu Cl 2 is 40 mmol / L, The photocurrent density is 0.11m A/cm2 (247.6% higher than that of pure cuprous oxide), and the carrier concentration is 3.58 脳 1019cm-3 (2457% higher than that of pure cuprous oxide). It is found that the carrier half-life of the thin films obtained in 40 mmol / L CuCl2 solution is increased to 8.92 s, which indicates that the photostability of the pure cuprous oxide thin films is greatly improved.
【作者单位】：景德镇陶瓷学院材料学院;
【基金】：江西省青年科学家(井冈之星)培养对象计划(20112BCB23022) 江西省科技厅对外合作项目(20133BDH80018)
【分类号】：O614.121;TM914.4

【参考文献】