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多晶硅双层减反射膜电池生产工艺优化

发布时间:2018-07-11 13:08

  本文选题:薄膜干涉 + 太阳电池 ; 参考:《电子科技大学》2014年硕士论文


【摘要】:能源危机日益严峻,太阳能电池的作用显得越来越重要。然而太阳能发电成本一直较高,这就需要我们改进工艺,降低太阳能电池的发电成本。在降低成本上有几个方面,一方面可以减少原材料的成本,还有一方面就是在不增加制造成本的基础上通过改进工艺提高电池转换效率。减少反射光和透射光的损失以及各种复合损失是提高太阳电池效率的关键。目前晶体硅太阳电池所用的减反射膜绝大部分是单层SiNx减反射膜,在350nm~1100nm的光谱范围内有一反射率的极小值,能够将太阳光的平均反射率降低到9%左右。理论计算表明,采用双层减反射膜,平均反射率能够进一步降低。双层减反射膜工艺通过现有的设备和人力的条件基础上,只需在原有的PECVD工艺上在加一步就能实现0.2%的效率提升。虽然只有0.2%,但是这已经是很大的进步,在降低生产成本和发电成本上又迈近了一步。本文研究了SiON/SiN双层减反射膜结构,和双层氮化硅SiN结构的电池片,所做的试验结果如下:1)通过多次大量PECVD试验得出了PECVD中总气体流量,压力,温度等因素对氮化硅SiN沉积速率,少子寿命的影响,从而为实现双层膜工艺提供了理论指导2)基于薄膜光干涉原理,利用双层减反射膜在300~1100nm波段上的超宽减反射特性,对传统的单层SiN减反膜电池做了改进。用等效导纳方法计算双层薄膜反射率,建立了模拟加权平均反射率的评价函数,并基于Matlab编程和Excel2007函数公式建立了光在单层和双层减反射膜的反射率曲线模拟程序,通过改变膜层参数(膜厚和折射率)的DOE试验模拟分析了双层减反射膜的膜厚和折射率变化对加权平均反射率影响的规律,试验过程中获得了最佳双层膜折射率和厚度匹配值,3)试验制备了SiON/SiN双层减反射膜电池,双层SiN减反射膜电池,与单层减反射膜比较,测试了电池封装前后封装后的反射率,量子效率,电性能参数,结果显示双层减反射膜电池,短路电流上双层膜要比单层膜的要高0.10~0.15A,双层膜开路电压要比单层膜高出2~3mv,因而最终双层膜太阳能电池片的效率要高出单层膜0.2~0.3%左右.双层薄膜具有优良的超宽带减反射特性,可以有效地提高工业生产中的多晶硅太阳电池光电转换效率.
[Abstract]:The energy crisis is becoming more and more serious, and the role of solar cells is becoming more and more important. However, the cost of solar power generation has been high, which requires us to improve the process and reduce the cost of solar cells. On the one hand, it can reduce the cost of raw materials; on the other hand, it can improve the efficiency of battery conversion by improving the process without increasing the manufacturing cost. Reducing the loss of reflected and transmitted light and various composite losses is the key to improve the efficiency of solar cells. At present, the antireflection films used in crystalline silicon solar cells are mostly single-layer Sinx antireflection films. There is a minimum reflectivity in the spectral range of 350nm~1100nm, which can reduce the average solar reflectivity to about 9%. The theoretical calculation shows that the average reflectivity can be further reduced by using the double layer antireflection film. On the basis of the existing equipment and manpower, the double layer antireflection film process can increase the efficiency by 0.2% only by adding one step to the original PECVD process. It's only 0.2, but it's a big step forward in reducing production and power costs. In this paper, the structure of Sion / SiN double layer antireflection film and the double layer silicon nitride SiN structure are studied. The experimental results are as follows: 1) the total gas flow rate, pressure and temperature in PECVD are obtained by many PECVD experiments, and the deposition rate of SiN in PECVD is obtained. The influence of minority carrier lifetime provides theoretical guidance for the realization of bilayer film technology 2) based on the principle of thin film optical interference, the conventional single-layer sin antireflection film battery is improved by using the ultra-broad reflectance characteristics of the double layer antireflection film in 300~1100nm band. The equivalent admittance method is used to calculate the reflectivity of double-layer thin films, and the evaluation function of simulating weighted average reflectivity is established. Based on Matlab programming and Excel 2007 function formula, the simulation program of reflectivity curve of light in single layer and double layer antireflection film is established. The influence of the thickness and refractive index of the double layer antireflection film on the weighted average reflectivity is analyzed by means of the DOE experiment, which changes the thickness and refractive index of the double layer antireflection film by changing the film parameters (film thickness and refractive index). During the experiment, the best refractive index and thickness matching value of the bilayer film were obtained. The Sion / SiN double layer antireflection film battery and the double SiN antireflection film battery were prepared. Compared with the single layer antireflection film, the reflectivity of the battery before and after encapsulation was measured. Quantum efficiency, electrical performance parameters, the results show that the double-layer antireflection film battery, The open circuit voltage of the bilayer film is 2mv higher than that of the monolayer film, and the efficiency of the bilayer membrane solar cell is about 0.2mv higher than that of the monolayer film. The double layer thin film has excellent UWB antireflection characteristics and can effectively improve the photoelectric conversion efficiency of polycrystalline silicon solar cells in industrial production.
【学位授予单位】:电子科技大学
【学位级别】:硕士
【学位授予年份】:2014
【分类号】:TM914.4

【参考文献】

相关硕士学位论文 前1条

1 张广英;氮化硅薄膜制备及其相关特性研究[D];大连理工大学;2009年



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