晶硅太阳能电池表面钝化薄膜和机理的研究

发布时间：2018-07-23 09:49

【摘要】：近年来,随着太阳能技术的蓬勃发展,在人们的日常生活中,太阳能电池应用的领域越来越广泛,而目前应用最多的就是硅太阳能电池。而如何降低晶硅太阳能电池的表面复合速率,提高光电转换效率成为目前人们研究的热点。氧化铝薄膜具有介电常数高,热稳定性好,制备温度较低等优点,而且能有效降低晶硅表面的复合速率,提升电池转换效率,非常适合作为晶硅太阳能电池表面的钝化薄膜。本文主要研究了利用溶胶-凝胶技术在晶硅太阳能电池上制备氧化铝薄膜,并对几种主要的钝化薄膜的钝化机理进行研究,通过对实验过程中工艺参数的控制来得到不同质量的氧化铝薄膜,并对制备的氧化铝薄膜进行研究测试分析。本文首先介绍了太阳能电池及太阳能电池表面钝化的发展状况,阐述了太阳能电池原理和太阳能电池表面钝化的原理,以及C-V法测试MIS结构的原理。成功在晶硅太阳能电池表面制备出高性能的氧化铝钝化薄膜,其中,测试得到的薄膜参数为：透过率达到95.6%,截止频率约为2×105Hz,界面态密度为5.82×1011cm-2eV-1。通过分析得到氧化铝薄膜的钝化效果与制作过程中的工艺参数密切相关。在一定条件下,氧化铝薄膜的厚度越厚,溶液浓度越高,退火温度越高,退火时间越长,得到的薄膜质量会越好,对晶硅太阳能电池表面的钝化效果也就越优异。
[Abstract]:In recent years, with the rapid development of solar energy technology, the application of solar cells is more and more extensive in people's daily life, and the most widely used is silicon solar cells. However, how to reduce the surface recombination rate of silicon solar cells and improve the photoelectric conversion efficiency has become a hot topic. Alumina thin films have the advantages of high dielectric constant, good thermal stability, low preparation temperature, and can effectively reduce the surface recombination rate of crystal silicon, improve the conversion efficiency of the battery, so it is very suitable to be used as passivation film on the surface of crystalline silicon solar cells. In this paper, the preparation of alumina thin films on crystalline silicon solar cells by sol-gel technology was studied, and the passivation mechanism of several main passivation films was studied. Alumina thin films with different quality were obtained by controlling the technological parameters in the experiment, and the alumina films were studied and analyzed. This paper first introduces the development of solar cells and their surface passivation, expounds the principle of solar cells and surface passivation of solar cells, and the principle of measuring MIS structure by C-V method. High performance alumina passivated films were successfully prepared on the surface of crystalline silicon solar cells. The measured parameters are as follows: transmittance is up to 95.6, cutoff frequency is about 2 脳 105 Hzand interfacial density of states is 5.82 脳 1011cm-2eV-1. The passivation effect of alumina film is closely related to the process parameters. Under certain conditions, the thicker the alumina film, the higher the solution concentration, the higher the annealing temperature, the longer the annealing time, the better the film quality is, and the better the passivation effect on the surface of silicon solar cell is.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM914.4

【参考文献】