水浴温度对CdS薄膜性能的影响
发布时间：2018-07-28 08:54
【摘要】：采用化学水浴法,以不同水浴温度在玻璃衬底上沉积CdS薄膜并制备CIGS薄膜太阳能电池,研究了水浴温度对CdS薄膜和CIGS太阳能电池性能的影响。结果表明:水浴温度对CdS薄膜的致密性、沉积速率、透过率和成分比率都有影响。在65-80℃之间制备的CdS薄膜均匀致密且透过率高,可作为CIGS太阳能电池的缓冲层;另外,CdS缓冲层的厚度对CIGS电池的性能影响显著,较薄的CdS缓冲层能够增加CIGS电池在400-500nm波段对光线的吸收,提高CIGS电池的短路电流。
[Abstract]:CdS thin films were deposited on glass substrates and CIGS thin film solar cells were prepared by chemical water bath method. The effects of water bath temperature on the properties of CdS thin films and CIGS solar cells were studied. The results show that the water bath temperature has an effect on the density, deposition rate, transmittance and composition ratio of CdS films. The CdS thin films prepared at 65-80 鈩，
本文编号：2149574
[Abstract]:CdS thin films were deposited on glass substrates and CIGS thin film solar cells were prepared by chemical water bath method. The effects of water bath temperature on the properties of CdS thin films and CIGS solar cells were studied. The results show that the water bath temperature has an effect on the density, deposition rate, transmittance and composition ratio of CdS films. The CdS thin films prepared at 65-80 鈩，
本文编号：2149574
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