HIT太阳电池的制备与性能研究

发布时间：2018-08-16 18:58

【摘要】：开发低成本、稳定以及高效的太阳能电池是光伏领域研究的目标，而HIT太阳电池既具有晶硅太阳电池的高效特性又具有薄膜太阳电池的低成本特点，成为光伏领域研究的热点。本文利用射频等离子体增强化学气相沉积方法制备P型非晶硅薄膜材料及其在HIT太阳电池上的应用，并对界面钝化进行实验研究。主要研究包括以下内容： 1、本论文以硅烷和硼烷作为反应气体，氢气作为稀释气体，在载玻片和单晶硅片上制备掺硼的非晶硅薄膜，系统研究了硅烷浓度、硼烷浓度、射频功率、以及加热温度等工艺参数对P型非晶硅薄膜材料生长速率、电学性能、光学性能以及微结构特性的影响。结果表明：在研究的范围内，沉积工艺参数的增加都有助于薄膜材料的生长；薄膜的暗电导率随着硅烷浓度的增加、硼烷浓度的增加和加热温度的增加都呈现上升的变化趋势，而随着射频功率的增加，薄膜的暗电导率先上升后下降；薄膜的光学带隙则随着硅烷浓度的增加、硼烷浓度的减小、加热温度的降低和射频功率的降低而增加；在硅烷浓度较高、硼烷浓度适中、烘烤适中和射频功率较低制备的非晶硅薄膜的致密性较好。优化沉积工艺参数获得了优质的P型非晶硅薄膜，其生长速率约为0.16nm/s，，暗电导率约为8.5E-6S/cm，光学带隙约为1.73eV。 2、在HIT太阳电池中，研究了氢处理和本征非晶硅薄膜的沉积工艺参数对界面钝化质量的影响。结果表明：电池的开路电压随着氢等离子体的射频功率增加而呈现下降的变化趋势；随着氢处理时间的增加，电池的开路电压先增加后降低，最佳处理时间为40s；沉积本征非晶硅薄膜时加热温度过高和射频功率过低都会发生外延生长，严重影响电池的开路电压；反应气压对电池的开路电压影响较小。 3、对窗口层和本征钝化层厚度进行优化，厚度分别为10nm和4nm左右。测得的电池开路电压都在0.55V左右，钝化质量和重复性都较好。QE和J-V特性测试结果表明：非晶硅薄膜材料太厚将增加对短波段光的吸收。通过优化沉积工艺参数，制备出转换效率为14.77%(Voc=0.568V，Isc=37.01mA/cm2，FF=0.703)的HIT太阳电池。
[Abstract]:The development of low cost, stable and efficient solar cells is the goal of photovoltaic research. HIT solar cells have both the high efficiency characteristics of crystalline silicon solar cells and the low cost characteristics of thin film solar cells, so it has become a hot spot in the field of photovoltaic research. P-type amorphous silicon thin films were prepared by radio-frequency plasma-enhanced chemical vapor deposition and their applications in HIT solar cells. The interface passivation was studied experimentally. The main contents are as follows: 1. In this thesis, boron doped amorphous silicon thin films were prepared on glass slide and single crystal silicon wafer using silane and borane as reaction gas and hydrogen as dilution gas. The concentration of silane was studied systematically. The effects of borane concentration, RF power and heating temperature on the growth rate, electrical properties, optical properties and microstructure of P-type amorphous silicon films were investigated. The results show that the increase of deposition parameters contributes to the growth of the films, and the dark conductivity of the films increases with the increase of silane concentration, the increase of borane concentration and the increase of heating temperature. The optical band gap increases with the increase of silane concentration, the decrease of borane concentration, the decrease of heating temperature and the decrease of RF power. The amorphous silicon films prepared with high concentration of silane, moderate concentration of borane, moderate baking and low RF power have better densification. High quality P type amorphous silicon thin films were obtained by optimizing the deposition parameters. The growth rate was about 0.16 nm / s, the dark conductivity was about 8.5 E-6S / cm, and the optical band gap was about 1.73 EV. 2. In HIT solar cells, The effects of hydrogen treatment and deposition parameters of intrinsic amorphous silicon film on the quality of interface passivation were studied. The results show that the open circuit voltage of the battery decreases with the increase of the RF power of the hydrogen plasma, and the open circuit voltage of the battery increases first and then decreases with the increase of the hydrogen treatment time, and the optimal treatment time is 40 s. When the intrinsic amorphous silicon film is deposited, the high heating temperature and the low RF power will produce the epitaxial growth, which seriously affects the open circuit voltage of the battery. The reaction pressure has little effect on the open circuit voltage of the battery. 3. The thickness of window layer and intrinsic passivation layer are optimized, the thickness is about 10nm and 4nm, respectively. The measured open circuit voltages are about 0.55 V, and the passivation quality and repeatability are good. The results show that the thickness of amorphous silicon thin films will increase the absorption of short band light. By optimizing the deposition process parameters, a HIT solar cell with a conversion efficiency of 14.77% (Voc0. 568 V ~ (-1) Isco 37. 01 Ma / 路m ~ (2) FF ~ (2) has been prepared.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM914.4

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