铜铟镓硒薄膜太阳电池缓冲层连续化大面积制备研究
发布时间：2018-09-04 21:03
【摘要】：本文主要对铜铟镓硒(Cu(In,Ga)Se_2,以下简称CIGS)薄膜太阳电池缓冲层硫化镉(CdS)由实验室制备向连续化制备方法进行深入研究。主要研究内容包括:实验室小面积制备CdS薄膜及其性能测试,实验室大面积制备CdS薄膜工艺探究,连续化制备CdS薄膜设备设计,实现卷对卷(Roll-to-Roll)连续化制备CdS薄膜且性能满足CIGS薄膜太阳电池设计要求。在实验室小面积(6cm×2cm)CdS薄膜制备研究方面,本文在醋酸盐体系下通过化学水浴法(Chemical Bath Deposition,CBD)以聚酰亚胺(Polyimide,PI)为衬底制备出均匀致密的CdS薄膜,着重研究制备过程中氨水浓度和水浴温度对CdS薄膜结晶质量及材料性能的影响。研究结果表明,实验室小面积制备CdS薄膜较佳的工艺条件为:1×10-3mol/L的(CH_3COO)_2Cd,1.3×10-3mol/L的NH_3·H_2O,0.01 mol/L的SC(NH_2)_2,3×10-3mol/L的CH_3COONH_4,75℃水浴温度,沉积时间为30分钟。将以此条件反应所制得的CdS薄膜应用于以PI为衬底的CIGS薄膜太阳电池,其光电转换效率达到11.06%。在实验室大面积(30cm×30cm)CdS薄膜制备研究方面,本文通过小面积制备CdS薄膜的工艺条件,结合大面积CdS薄膜制备过程中所遇到的问题,对工艺条件进行调整,调整后氨水浓度和水浴温度条件为:以5×10-3 mol/L的(CH_3COO)_2Cd、0.05mol/L的SC(NH_2)_2、1.5×10-2mol/L的CH_3COONH_4、6.5×10-3mol/L的NH_3·H_2O,75℃水浴温度,沉积时间为10分钟。将以此条件反应所制得的CdS薄膜应用于以PI为衬底的CIGS薄膜太阳电池,其光电转换效率达到9.12%。在连续化制备CdS薄膜的设备设计方面,结合实验室大面积制备工艺与经验,深入研究由静止溶液向动态溶液沉积方面的机理,由此引申到设备的设计和制造。在对若干设备的设计样稿进行分析并与前期实验研究结果相结合后,最终决定采用溢流方式设计连续化制备CdS薄膜的设备,并完成设备制造。采用溢流方式的CdS制备设备,对设备工艺进行不断改进优化,最终成功实现连续化制备CdS薄膜,工艺条件为:3×10-3 mol/L的(CH_3COO)_2Cd,1.5 mol/L的NH_3·H_2O,0.45 mol/L的SC(NH_2)_2,水浴温度为60℃,沉积时间为10分钟。
[Abstract]:In this paper, cadmium sulfide (CdS) buffer layer of copper indium gallium selenium (Cu (In,Ga) Se_2, (CIGS) thin film solar cell was studied from laboratory preparation to continuous preparation. The main research contents include: laboratory small area CdS thin film preparation and its performance test, laboratory large area CdS thin film preparation process, continuous preparation of CdS film equipment design, CdS thin films were prepared by continuous roll-to-roll (Roll-to-Roll) and the performance of CIGS thin-film solar cells was met. In the field of preparation of small area (6cm 脳 2cm) CdS thin films in laboratory, homogeneous and dense CdS thin films were prepared on the substrate of polyimide (Polyimide,PI) by chemical water bath method (Chemical Bath Deposition,CBD) in acetate system in this paper. The effects of ammonia concentration and bath temperature on the crystallization quality and properties of CdS thin films were studied. The results show that the optimum conditions for the preparation of CdS thin films in laboratory are as follows: 1: 1 脳 10-3mol/L (CH_3COO), 1. 3 脳 10-3mol/L, NH_3 H2O0.01 mol/L, SC (NH_2), 3 脳 10-3mol/L, CH_3COONH_4,75 鈩，
本文编号：2223325
[Abstract]:In this paper, cadmium sulfide (CdS) buffer layer of copper indium gallium selenium (Cu (In,Ga) Se_2, (CIGS) thin film solar cell was studied from laboratory preparation to continuous preparation. The main research contents include: laboratory small area CdS thin film preparation and its performance test, laboratory large area CdS thin film preparation process, continuous preparation of CdS film equipment design, CdS thin films were prepared by continuous roll-to-roll (Roll-to-Roll) and the performance of CIGS thin-film solar cells was met. In the field of preparation of small area (6cm 脳 2cm) CdS thin films in laboratory, homogeneous and dense CdS thin films were prepared on the substrate of polyimide (Polyimide,PI) by chemical water bath method (Chemical Bath Deposition,CBD) in acetate system in this paper. The effects of ammonia concentration and bath temperature on the crystallization quality and properties of CdS thin films were studied. The results show that the optimum conditions for the preparation of CdS thin films in laboratory are as follows: 1: 1 脳 10-3mol/L (CH_3COO), 1. 3 脳 10-3mol/L, NH_3 H2O0.01 mol/L, SC (NH_2), 3 脳 10-3mol/L, CH_3COONH_4,75 鈩，
本文编号：2223325
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