温度改变对钛氧化物忆阻器导电特性的影响

发布时间：2018-10-25 10:35

【摘要】：相同测试条件下,纳米钛氧化物忆阻器的导电过程存在不稳定性,制约了对器件瞬态阻抗的精确读取与控制,并影响了器件应用于电路设计的可靠性与稳定性.杂质漂移与隧道势垒的共存是导致上述不稳定性的可能因素,且杂质漂移特性与环境温度密切相关.然而,目前尚无通过控制温度提高忆阻器导电稳定性的具体研究.基于杂质漂移与隧道势垒共存,本文分析了温度与忆阻器导电特性的关联,研究了器件活跃区域厚度及初始掺杂层厚度的改变对临界温度的影响,利用SPICE软件进行了仿真验证并给出结果,得出提高忆阻器导电稳定性的方法有:增大活跃区域厚度、降低初始杂质浓度及保持环境温度稳定且低于临界温度,从而为制备性能稳定的忆阻器及推动器件在实际电路中的应用提供依据.
[Abstract]:Under the same test conditions, there is instability in the conductive process of the nanocrystalline titanium oxide resistor, which restricts the accurate reading and control of the transient impedance of the device, and affects the reliability and stability of the device used in the circuit design. The coexistence of impurity drift and tunnel barrier is the possible factor leading to the instability, and the impurity drift characteristic is closely related to the ambient temperature. However, there is no specific research on improving the conductive stability of the resistor by controlling the temperature. Based on the coexistence of impurity drift and tunnel barrier, the correlation between the temperature and the electrical conductivity of the device is analyzed, and the influence of the thickness of the active region of the device and the thickness of the initial doping layer on the critical temperature is studied. The simulation results are given by using SPICE software. The methods to improve the conductive stability of the resistor are as follows: increasing the thickness of active region, reducing the initial impurity concentration and keeping the ambient temperature stable and lower than the critical temperature. Thus, it provides the basis for the preparation of stable resistor and the application of propulsive devices in practical circuits.
【作者单位】：国防科学与技术大学电子科学与工程学院;
【基金】：国家自然科学基金(批准号:61171017,F010505)资助的课题~~
【分类号】：TM54

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