高绒度掺硼氧化锌透明导电薄膜用作非晶硅太阳电池前电极的研究

发布时间：2018-10-25 16:40

【摘要】：将自行研制的具有优异陷光能力的掺硼氧化锌用作p-i-n型非晶硅太阳电池的前电极,并且将传统商业用U型掺氟二氧化锡作为对比电极.相比表面较为平滑的掺氟二氧化锡,掺硼氧化锌表面大类金字塔的绒面结构会在本征层生长过程中触发阴影效应,形成大量的高缺陷材料区和漏电沟道,进而恶化电池的开路电压和填充因子.在不修饰掺硼氧化锌表面形貌的情况下,通过调节非晶硅本征层的沉积温度来消弱高绒度表面形貌引起的这种不利影响,对应的电池开路电压和填充因子均出现提升.在仅有铝背电极的情况下,在本征层厚度为200 nm的情况下,以掺硼氧化锌为前电极的非晶硅太阳电池转换效率达7.34%(开路电压为0.9 V,填充因子为70.1%,短路电流密度11.7 mA/cm2).
[Abstract]:The prepared zinc oxide doped boron oxide with excellent light trapping ability was used as the front electrode of p-i-n amorphous silicon solar cell and the traditional commercial use of U type doped tin dioxide as contrast electrode. Compared with fluoride-doped tin dioxide with a smoother surface, the flannel structure of the pyramids on the surface of zinc oxide doped with boron will trigger the shadow effect during the growth of the intrinsic layer, resulting in a large number of high defect material areas and leakage channels. In turn, the open circuit voltage and filling factor of the battery are worsened. Without modifying the surface morphology of zinc oxide doped with boron, by adjusting the deposition temperature of the intrinsic layer of amorphous silicon to attenuate the adverse effect caused by the surface morphology of high velvet, the corresponding open circuit voltage and filling factor of the battery are increased. When the thickness of the intrinsic layer is 200 nm, the conversion efficiency of amorphous silicon solar cells with boron doped zinc oxide as the front electrode is 7.34% (open circuit voltage is 0.9 V, filling factor is 70.1, short-circuit current density is 11.7 mA/cm2).
【作者单位】：南开大学信息科学与技术学院光电子薄膜器件与技术研究所;
【基金】：国家重点基础研究发展计划(批准号:2011CBA00706,2011CBA00707) 国家自然科学基金(批准号:60976051) 国家高技术研究发展计划(批准号:2013AA050302) 天津市科技支撑项目(批准号:12ZCZDGX03600) 天津市重大科技支撑计划项目(批准号:11TXSYGX22100) 高等学校博士学科点专项科研基金(批准号:20120031110039)资助的课题~~
【分类号】：TM914.41

【参考文献】