铜铟镓硒薄膜的制备及其性能研究

发布时间：2018-11-15 21:04

【摘要】：随着社会的不断发展，传统化石能源日益枯竭，寻找可再生的新能源成为世界各国的当务之急。目前，人们已把来源丰富、廉价、清洁无污染的太阳能作为现代开发利用的主要新能源之一。在太阳能的利用中，铜铟镓硒(CIGS)薄膜电池由于效率高、成本低、无衰退、寿命长、抗辐射等优点，而被认为是最具有前途的一种新型的光伏电池产品。目前，制备CIGS薄膜的方法有很多种，其中磁控溅射的方法是最见成效的方法之一。在本论文中，我们采用技术成熟的磁控溅射-后硒化法制备CIGS薄膜材料，首先我们采用单个合金靶制备Cu-In-Ga（CIG）的合金预置层；然后通过高温硒化退火制备出不同质量的CIGS薄膜材料，并进行了一些光电性能的表征。探讨研究了将CIGS薄膜作为吸收层进行了薄膜电池的组装。在实验中又发现CIGS薄膜具有良好的导电性能和高的催化性能，所以我们把其首次应用到了染料敏化电池上面，所测得的效率可与Pt相媲美。本论文主要从以下几个部分进行研究：第一部分， CIGS薄膜的制备。在这部分实验中，我们采用两步法制备CIGS薄膜材料。首先，通过磁控溅射先制备出不同厚度的Cu-In-Ga合金预置层；其次，通过不同的硒化时间、硒化温度和升温速率等，制备出不同质量的CIGS薄膜材料，并进行了一些表征。简单探讨了这些硒化条件的变化对CIGS薄膜材料性能的影响。第二部分，铜铟镓硒薄膜电池的组装。在本阶段，我们尝试性的进行了CIGS薄膜电池的组装，我们先通过一些测试证明所制备的CIGS为P型结构。对其他各层的制备：首先，分别利用各种方法制备了Mo背电极（具有双层结构）、CdS缓冲层、i-ZnO/Al:ZnO窗口层和Al电极。然后，选择适当质量的CIGS吸收层进行薄膜电池的组装。最后对组装好的电池进行了I-V测试。第三部分，铜铟镓硒薄膜在光电中的应用。我们在FTO基底上制备CIGS薄膜，将薄膜作为对电极材料进行染料敏化电池的组装，，并对其性能进行测试。我们通过对不同薄膜的厚度对电池性能的影响进行探索研究，优化实验条件，得到拥有优越性能的染料敏化电池。第四部分，油墨法制备铜铟镓硒薄膜材料。在该部分中，我们采用物理的方法先把铜、铟、镓三种单质分散到DDT中制成油墨；然后，通过硒化退火的过程制备成CIGS薄膜材料，并进一步对其表征。
[Abstract]:With the development of society, the traditional fossil energy is exhausted day by day. At present, solar energy, which is abundant, cheap, clean and clean, has been regarded as one of the main new energy sources. Due to its high efficiency, low cost, no decay, long life and radiation resistance, copper indium gallium selenium (CIGS) thin film cell is considered as the most promising photovoltaic cell. At present, there are many methods to prepare CIGS thin films, among which magnetron sputtering is one of the most effective methods. In this thesis, we prepared CIGS thin films by magnetron sputtering and post-selenization method. Firstly, we prepared the alloy preset layer of Cu-In-Ga (CIG) by single alloy target. Then, CIGS thin films with different quality were prepared by high temperature selenization annealing, and some optical and electrical properties were characterized. The assembly of thin film battery using CIGS thin film as absorption layer was studied. It is also found that the CIGS film has good conductivity and high catalytic performance, so we applied it to the dye sensitized battery for the first time, and the measured efficiency is comparable to that of Pt. This thesis mainly includes the following parts: the first part, the preparation of CIGS thin films. In this part of the experiment, we prepared CIGS thin films by two-step method. Firstly, different thickness of Cu-In-Ga alloy was prepared by magnetron sputtering. Secondly, different quality of CIGS films were prepared by different selenation time, temperature and heating rate. The effect of these selenization conditions on the properties of CIGS thin films was discussed. The second part is the assembly of copper indium gallium selenium thin film battery. In this stage, we tried to assemble the CIGS thin film battery. We first tested the prepared CIGS as a P-type structure. The preparation of other layers: firstly, Mo back-electrode (), CdS buffer layer with double-layer structure, i-ZnO/Al:ZnO window layer and Al electrode) were prepared by various methods. Then, the CIGS absorbent layer of appropriate quality is selected to assemble the thin film battery. Finally, I-V test was carried out on the assembled battery. The third part, the application of copper indium gallium selenium film in photoelectricity. CIGS thin films were prepared on FTO substrates. The films were used as electrode materials for the assembly of dye sensitized batteries and their properties were tested. We studied the effect of different film thickness on the performance of the cell and optimized the experimental conditions to obtain the dye sensitized battery with superior performance. In the fourth part, copper indium gallium selenium thin films were prepared by ink method. In this part, we first disperse copper, indium and gallium into DDT to make ink by physical method, then we prepare CIGS thin film by the process of selenium annealing, and further characterize it.
【学位授予单位】：河南大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM914.4

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