CIS太阳电池用薄膜的喷雾法制备研究

发布时间：2018-11-18 12:36

【摘要】：能源是国家发展的重要基石。随着社会的需求,可再生清洁能源成为发展的趋势。太阳能就是其中之一,它不仅储量巨大,同时又不需要消耗地球上的其他资源,因此研究和更好利用太阳能是今后全球的重要课题。太阳电池是一类能够把太阳能直接转换成电能的装置。依托它为核心,形成了对应的光伏系统。虽然当前已经产业化,但是使用的技术过度依赖高真空条件,这大大提高了生产成本,同时目前采用的硅基等太阳电池,其生产过程中消耗大量的能源。为了解决这些问题,本文采用喷雾热解法在大气环境下,对CuInS2薄膜太阳电池的各层材料的制备展开了研究,具体结果如下：首先,介绍了超声喷雾热解法在玻璃衬底上制备CuInS2薄膜的过程,通过不同表征测试手段研究了衬底温度, Cu/In原子比,不同退火等工艺参数对CuInS2薄膜的影响。光学显微镜和XRD测试揭示了样品表面的粗糙程度、杂质项及主要结晶成分的晶化程度；透射光谱计算得到样品禁带宽度Eg=1.45 eV,符合理想的太阳电池光电材料的禁带宽度；冷热探针法测试显示样品为p型导电,同时,随着Cu元素浓度增加,导电类型趋于本征,载流子浓度增加且电阻率降低。因此,我们制得的样品比较适合太阳电池吸收层的制备。其次,对比了Mo与玻璃衬底对CuInS2薄膜的影响。制备条件相同的情况下,在Mo与玻璃衬底上制备的薄膜结晶性、粗糙度和厚度等方面趋势大体相同,但Mo基底上的薄膜,在结晶性,均匀性,薄膜平整度和表面形貌等方面均优于玻璃基底上的薄膜。此外,不同衬底对制备出的薄膜晶格参数也有一定的影响。再次,采用超声喷雾热解法制备了窗口层AZO导电薄膜,研究了醇水比、衬底温度、喷雾时间、喷雾速度和退火处理等工艺参数对AZO薄膜结构和性能的影响。喷雾速度为4ml/min、醇水比为4：1、喷涂时间为30 min时,得到的薄膜样品性能最好；当基底温度保持在350℃或者500℃时,样品均表现出较好的导电性；对样品做真空退火处理,能够明显提高其电学和光学性能。最后,同样是采用超声喷雾热解法制备了缓冲层In2S3薄膜,确定了薄膜制备的最佳衬底温度。在300到400℃下,制备出了禁带宽度变化在3.01 eV-3.22eV之间的In2S3薄膜,适合作为CuInS2太阳电池缓冲层。
[Abstract]:Energy is an important cornerstone of national development. With the demand of society, renewable clean energy has become the trend of development. Solar energy is one of them. It not only has huge reserves, but also does not need to consume other resources on the earth. Therefore, studying and making better use of solar energy is an important global topic in the future. Solar cells are devices that can convert solar energy directly into electrical energy. Relying on it as the core, formed the corresponding photovoltaic system. Although it has been industrialized at present, the technology used is excessively dependent on high vacuum conditions, which greatly increases the production cost. At the same time, the silicon based solar cells, which are used at present, consume a lot of energy in the process of production. In order to solve these problems, the preparation of various layers of CuInS2 thin film solar cells is studied by spray pyrolysis in the atmosphere. The results are as follows: firstly, The process of preparing CuInS2 thin films on glass substrates by ultrasonic spray pyrolysis was introduced. The effects of substrate temperature, Cu/In atomic ratio and annealing parameters on CuInS2 thin films were studied by different characterization methods. Optical microscope and XRD test revealed the roughness of the sample surface, the degree of crystallization of impurity and main crystalline components, and the band gap of the sample was calculated by transmission spectrum, and the band gap of photovoltaic material of solar cell with Eg=1.45 eV, was obtained. The hot and cold probe method showed that the sample was p type conductive. At the same time, with the increase of Cu element concentration, the conduction type tended to be intrinsic, the carrier concentration increased and the resistivity decreased. Therefore, our sample is more suitable for the preparation of solar cell absorption layer. Secondly, the effects of Mo and glass substrates on CuInS2 films are compared. Under the same preparation conditions, the crystallinity, roughness and thickness of the films prepared on Mo and glass substrates are similar, but the films on Mo substrates have the same crystallinity and uniformity. The smoothness and surface morphology of the films are better than those on glass substrates. In addition, different substrates also have some influence on the lattice parameters of the prepared thin films. Thirdly, the window layer AZO thin films were prepared by ultrasonic spray pyrolysis. The effects of alcohol / water ratio, substrate temperature, spray time, spray rate and annealing on the structure and properties of AZO films were investigated. When the spray rate is 4 ml / min, the ratio of alcohol to water is 4: 1, and the spraying time is 30 min, the film has the best properties, and when the substrate temperature is kept at 350 鈩，

本文编号：2340053