新型Ⅱ-Ⅵ族半导体分级纳米阵列结构及光伏电池研究
发布时间：2018-12-17 23:27
【摘要】：在过去的几十年里，II-VI族纳米材料由于其有别于块体材料的新奇特性以及巨大的应用潜力而深受研究者的青睐。特别地，一维的II-VI族半导体纳米线阵列由于其高度有序的几何结构以及可作为未来纳米功能器件的结构基元而得到格外的关注。本文以一维半导体纳米线阵列为切入点，从纳米线阵列的可控合成与组装的角度，分别制备出以CdS纳米线阵列、ZnO纳米线阵列为分支结构的分级纳米阵列结构。在纳米阵列结构的应用方面，我们从量子点光伏电池出发，结合器件对能带结构与光学吸收的要求，我们构建并系统研究了基于阵列纳米结构的PbS量子点体异质结型光伏电池。我们首先开发了一种低成本的PbS量子点的合成工艺；同时从量子点电池规模化制备的角度，开发了量子点的提拉制膜工艺，为量子点薄膜的规模化应用打下基础；最后在ZnO、TiO2纳米线阵列制备的基础上构建了体异质结型量子点光伏电池，为此类电池的研究提供了参考。 本论文的主要研究内容如下： 1.通过电沉积的方法制备Cd的微米片阵列，并以此作为CdS纳米线阵列的生长基体，结合溶剂热反应，成功实现了一种新型的CdS分级纳米阵列结构的制备。分析了所制备的纳米阵列结构的形貌、结构、成分、物相，同时，通过对反应条件的调控以及对反应产物的分析，系统研究了CdS纳米线阵列的形核与生长特性。通过对电沉积体系的深入研究，提出了“氢气泡”辅助的Cd微米片阵列的生长机制，为此种结构的其它II-VI族半导体化合物的合成提供了有力的参考。 2.在CdS分级纳米阵列结构的合成工艺路线之上，成功实现了此种制备方法的推广，，并获得了ZnO的分级纳米阵列结构。分析了所制备的纳米阵列结构的形貌、结构、成分、物相，研究了ZnO分级纳米阵列结构的形成机制。通过对电沉积体系的研究与分析，证实了Zn微米片阵列的生长遵循“氢气泡”辅助生长的机制。在Zn微米片阵列的结构参数的调控基础之上，实现了ZnO分级纳米阵列结构的可控制备。 3.分析了PbS量子点合成的限制因素，从低成本、绿色环保的角度出发，通过复合硫源的路线设计，有效地调制了硫源前驱体的活性，获得了单分散良好的PbS量子点。分析了所得量子点的形貌、尺寸和物相，深入研究了PbS量子点的生长动力学特性。最后，为胶体合成化学中前驱体活性的调节，提供了一个新的思路。 4.从提高材料利用率、规模化制备的角度出发，开发了一种制备高质量的量子点薄膜的提拉制膜工艺。研究了量子点浓度、提拉速度、环境湿度与温度对量子点成膜特性的影响。在提拉制膜法的基础上，以耗尽异质结型光伏器件结构为平台，评价了此提拉制膜法制备的量子点薄膜的光伏特性。同时，以有序的ZnO纳米线阵列为材料平台，研究了该提拉制膜法对大粗糙度基体表面的均镀特性；构造了新型的“纳米线-量子点”径向结型光伏电池，研究了其光伏特性及存在的问题，为高性能径向结型量子点光伏电池的构建提供了参考。 5.构造了基于PbS量子点的耗尽体异质结型量子点光伏电池。通过水热法合成了高度有序的ZnO纳米线阵列，通过对反应条件的控制，实现了ZnO纳米线阵列的可控生长；利用PbS量子点作为光活性层，构建了基于ZnO纳米线阵列的耗尽体异质结型量子点光伏电池，研究了PbS量子点的涂覆厚度对其光伏特性的影响；在ZnO纳米线的基础上，通过液相处理工艺，实现了TiO2纳米线网络结构电极的制备，构建了基于“PbS量子点-TiO2纳米线网络结构电极”的耗尽体异质结型量子点光伏电池，研究了n型结构电极的材料选择及其结构参数对器件光伏特性的影响，分析了耗尽体异质结型光伏电池的性能增强机制。
[Abstract]:In the past few decades, the Group II-VI nanomaterials have been favored by the researchers due to their novel characteristics, as distinct from the bulk materials, and the enormous potential for its application. In particular, the one-dimensional group II-VI semiconductor nanowire array is of particular interest due to its highly ordered geometry and the structural elements that can be used as a future nano-functional device. In this paper, based on the one-dimensional semiconductor nanowire array, a graded nano-array structure with a CdS nanowire array and a ZnO nanowire array as a branch structure is prepared from the angle of controllable synthesis and assembly of the nanowire array. In terms of the application of the nano-array structure, we have constructed and systematically studied the PbS quantum dot-body heterojunction type photovoltaic cell based on the array-based nano-structure, starting from the quantum dot photovoltaic cell and combining the requirements of the device to the energy band structure and the optical absorption. The method comprises the following steps of: firstly, developing a synthesis process of a low-cost PbS quantum dot; and simultaneously, developing a pull-up film process of the quantum dot from the angle of the large-scale preparation of the quantum dot cell, laying a foundation for the large-scale application of the quantum dot thin film, and finally, On the basis of the preparation of the TiO2 nanowire array, a bulk heterojunction type quantum dot photovoltaic cell is built, and a reference is provided for the research of such a battery. The main contents of this paper are as follows: under the following steps of: (1) preparing a micro-chip array of Cd by an electrodeposition method, and taking the micro-chip array as a CdS nanowire array as a growth matrix, and successfully realizing a novel CdS graded nano-array structure in combination with a solvothermal reaction; The morphology, structure, composition and phase of the prepared nano-array structure were analyzed. In this paper, the growth mechanism of the 鈥渉ydrogen bubble鈥
本文编号：2384942
[Abstract]:In the past few decades, the Group II-VI nanomaterials have been favored by the researchers due to their novel characteristics, as distinct from the bulk materials, and the enormous potential for its application. In particular, the one-dimensional group II-VI semiconductor nanowire array is of particular interest due to its highly ordered geometry and the structural elements that can be used as a future nano-functional device. In this paper, based on the one-dimensional semiconductor nanowire array, a graded nano-array structure with a CdS nanowire array and a ZnO nanowire array as a branch structure is prepared from the angle of controllable synthesis and assembly of the nanowire array. In terms of the application of the nano-array structure, we have constructed and systematically studied the PbS quantum dot-body heterojunction type photovoltaic cell based on the array-based nano-structure, starting from the quantum dot photovoltaic cell and combining the requirements of the device to the energy band structure and the optical absorption. The method comprises the following steps of: firstly, developing a synthesis process of a low-cost PbS quantum dot; and simultaneously, developing a pull-up film process of the quantum dot from the angle of the large-scale preparation of the quantum dot cell, laying a foundation for the large-scale application of the quantum dot thin film, and finally, On the basis of the preparation of the TiO2 nanowire array, a bulk heterojunction type quantum dot photovoltaic cell is built, and a reference is provided for the research of such a battery. The main contents of this paper are as follows: under the following steps of: (1) preparing a micro-chip array of Cd by an electrodeposition method, and taking the micro-chip array as a CdS nanowire array as a growth matrix, and successfully realizing a novel CdS graded nano-array structure in combination with a solvothermal reaction; The morphology, structure, composition and phase of the prepared nano-array structure were analyzed. In this paper, the growth mechanism of the 鈥渉ydrogen bubble鈥
本文编号：2384942
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