渐变带隙氢化非晶硅锗薄膜太阳能电池的优化设计

发布时间：2019-01-06 09:14

【摘要】：利用一维微电子-光电子结构分析软件(AMPS-1D)在AM1.5G(100 mW/cm2)、室温条件下模拟和比较了有、无渐变带隙氢化非晶硅锗(a-SiGe:H)薄膜太阳能电池的各项性能.计算结果表明:渐变带隙结构电池具有较高的开路电压(V oc)和较好的填充因子(FF),转换效率(E ff)比非渐变带隙电池提高了0.477%.研究了氢化非晶硅(a-Si:H)、氢化非晶碳化硅(a-SiC:H)和氢化纳米晶硅(nc-Si:H)三种不同材料的窗口层对a-SiGe:H薄膜太阳能电池性能的影响.结果显示:在以nc-Si:H为窗口层的电池能带中,费米能级E F已经进入价带,使得窗口层电导率及电池开路电压有所提高,又由于ITO与p-nc-Si:H的接触势垒较低,使得接触处的电场降低,更有利于载流子的收集.另一方面,窗口层与a-SiGe:H薄膜之间存在较大的带隙差,在p/i界面由于能带补偿作用形成了价带势垒(带阶)?E v,阻碍了空穴的迁移,因此我们在p/i界面引入缓冲层,使得能带补偿作用得到释放,更有利于空穴的迁移和收集,得到优化后单结渐变带隙a-SiGe:H薄膜结构太阳能电池的转换效率达到了9.104%.
[Abstract]:The properties of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells without gradient band gap were simulated and compared by one-dimensional microelectron-optoelectronic structure analysis software (AMPS-1D) at AM1.5G (100 mW/cm2) at room temperature. The calculated results show that the open circuit voltage (V oc) and the filling factor (FF), conversion efficiency (E ff) of the graded band-gap cell are higher than that of the non-graded band-gap cell by 0.477. The effects of window layers of hydrogenated amorphous silicon (a-Si:H), hydrogenated amorphous silicon carbide (a-SiC:H) and hydrogenated nanocrystalline silicon (nc-Si:H) on the performance of a-SiGe:H thin film solar cells were investigated. The results show that the Fermi level EF has entered the valence band in the battery band with nc-Si:H as the window layer, which makes the conductivity of the window layer and the open circuit voltage of the cell increase, and the contact barrier between ITO and p-nc-Si:H is lower. The electric field at the contact point is reduced, which is more favorable to the collection of carriers. On the other hand, there is a large band gap difference between the window layer and the a-SiGe:H film. At the p / I interface, the valence band barrier (band order) E v is formed, which hinders the migration of the hole. So we introduce a buffer layer at the p / I interface, which releases the energy band compensation, which is more conducive to the migration and collection of holes. The conversion efficiency of single-junction graded a-SiGe:H thin film solar cells is 9.104.
【作者单位】：云南大学光电信息材料研究所;
【基金】：国家自然科学基金(批准号:11274266,10990103) 云南大学理工项目基金(批准号:2012CG008) 云南省应用基础研究计划重点项目(批准号:2013FA029)资助的课题~~
【分类号】：TM914.4

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