碳化硅光导开关的制备与性能研究
发布时间：2019-01-17 10:47
【摘要】：光导开关全称为光控光导半导体开关,因其触发抖动小、极高的响应速度、极高的功率容量、耐压能力强、功耗低、寄生电感电容小、动态范围大等优良的电学特性,加之开关体积小、结构简单而受到国内外研究者的重视,成为脉冲功率应用技术领域的一枝新秀。碳化硅材料与传统的半导体材料相比具有禁带宽度大、击穿场强高、介电常数大、热导率高和抗辐射能力强等优异性质,被认为是最适合制备超快、大功率、耐高温的光电子器件的材料。现在大尺寸高质量的碳化硅生长技术日趋成熟,将来必定大规模应用到脉冲功率器件、微电子器件和电力电子器件制造中。本文使用半绝缘碳化硅作为光导开关的衬底材料,两者之间的珠联璧合必将促进超快大功率光导开关的发展。 本文首先介绍了光导开关的研究背景、工作原理及发展历史,研究了碳化硅材料对光导开关的影响。在大量文献调研的基础之上,制定了碳化硅光导开关研究的技术路线图。根据技术路线图,利用磁控溅射设备在n型4H-SiC衬底的(000-1)面上沉积了Ti金属电极,研究了在退火处理过程中不同的电极放置方式对接触性能的影响。当实验样品的电极面朝着硅托退火时,样品表现出良好的欧姆接触性能,否则就没有欧姆接触性质。利用X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)和原子力电子显微镜(AFM)对其界面相结构、组份、电极薄膜厚度和表面形貌进行了研究分析。在退火处理过程中从硅靶额外引入的硅元素对形成欧姆接触起了关键作用。接着在4H-SiC的C面上制备了Si/Ti/SiC体系和Si面上制备了Ni/SiC体系的欧姆接触,利用线性传输线法(TLM)计算了比接触电阻率,并分析了表面形貌对欧姆接触性质的影响。 本文在制备欧姆接触的研究基础上,在半绝缘碳化硅衬底上制备了同面横向结构的光导开关,并对光导开关的电学性能进行了分析。针对SiC光导开关的特点,搭建了测试平台,利用532nm波长的Nd:YAG激光器做触发光源,着重研究了同面型横向结构的光导开关的电学性能,获得了开关导通电脉冲的下降沿时间小于3ns,上升沿时间小于13ns,导通电脉冲信号的脉宽稳定在12ns,与触发激光电脉冲信号的脉宽一致。
[Abstract]:The photoconductive switch is called optically controlled photoconductive semiconductor switch, because of its excellent electrical properties, such as low trigger jitter, high response speed, high power capacity, high voltage resistance, low power consumption, small parasitic inductance and capacitance, large dynamic range, etc. In addition, the switch is small in size, simple in structure and paid attention to by researchers at home and abroad, so it has become a new star in the field of pulse power application technology. Compared with traditional semiconductor materials, silicon carbide has many excellent properties, such as wide band gap, high breakdown field strength, large dielectric constant, high thermal conductivity and strong radiation resistance, etc. It is considered to be the most suitable for preparation of ultra-fast and high-power materials. High temperature resistant materials for optoelectronic devices. Nowadays, the technology of silicon carbide growth with large size and high quality is becoming more and more mature, and it will be used in the manufacture of pulse power devices, microelectronic devices and power electronic devices on a large scale in the future. In this paper, the semi-insulating silicon carbide is used as the substrate material for photoconductive switch. The perfect combination between the two materials will promote the development of ultra-fast and high-power photoconductive switch. In this paper, the research background, working principle and development history of photoconductive switch are introduced, and the influence of silicon carbide on photoconductive switch is studied. Based on a large amount of literature, a technical roadmap for the study of silicon carbide photoconductive switches is developed. According to the technical roadmap, Ti metal electrodes were deposited on (000-1) surfaces of n-type 4H-SiC substrates by magnetron sputtering equipment. The effects of different electrode placement methods on the contact properties during annealing were studied. When the electrode surface of the experimental sample is annealed towards the silicon holder, the sample exhibits good ohmic contact performance, otherwise, there is no ohmic contact property. The interfacial phase structure, composition, electrode film thickness and surface morphology were studied by X-ray diffraction (XRD) (XRD), X ray photoelectron spectroscopy (XPS),) scanning electron microscope (SEM) and atomic force electron microscopy (AFM). The addition of silicon element from silicon target plays a key role in the formation of ohmic contact during annealing. Then the ohmic contacts of Si/Ti/SiC system and Ni/SiC system were prepared on C plane of 4H-SiC and Ni/SiC system on Si surface. The specific contact resistivity was calculated by (TLM) method. The influence of surface morphology on ohmic contact properties was analyzed. Based on the study of ohmic contact, the photoconductive switch with the same plane transverse structure was fabricated on semi-insulating silicon carbide substrate, and the electrical properties of the photoconductive switch were analyzed. According to the characteristics of SiC photoconductive switch, a testing platform is set up. The electrical properties of the photoconductive switch with the same plane transverse structure are studied by using the Nd:YAG laser of 532nm wavelength as the trigger light source. It is obtained that the duration of the on-off pulse is less than 3ns, the rising edge time is less than 13ns, and the pulse width of the turn-on pulse signal is stable at 12ns, which is the same as the pulse width of the triggered laser pulse signal.
【学位授予单位】：上海师范大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM564
本文编号：2409984
[Abstract]:The photoconductive switch is called optically controlled photoconductive semiconductor switch, because of its excellent electrical properties, such as low trigger jitter, high response speed, high power capacity, high voltage resistance, low power consumption, small parasitic inductance and capacitance, large dynamic range, etc. In addition, the switch is small in size, simple in structure and paid attention to by researchers at home and abroad, so it has become a new star in the field of pulse power application technology. Compared with traditional semiconductor materials, silicon carbide has many excellent properties, such as wide band gap, high breakdown field strength, large dielectric constant, high thermal conductivity and strong radiation resistance, etc. It is considered to be the most suitable for preparation of ultra-fast and high-power materials. High temperature resistant materials for optoelectronic devices. Nowadays, the technology of silicon carbide growth with large size and high quality is becoming more and more mature, and it will be used in the manufacture of pulse power devices, microelectronic devices and power electronic devices on a large scale in the future. In this paper, the semi-insulating silicon carbide is used as the substrate material for photoconductive switch. The perfect combination between the two materials will promote the development of ultra-fast and high-power photoconductive switch. In this paper, the research background, working principle and development history of photoconductive switch are introduced, and the influence of silicon carbide on photoconductive switch is studied. Based on a large amount of literature, a technical roadmap for the study of silicon carbide photoconductive switches is developed. According to the technical roadmap, Ti metal electrodes were deposited on (000-1) surfaces of n-type 4H-SiC substrates by magnetron sputtering equipment. The effects of different electrode placement methods on the contact properties during annealing were studied. When the electrode surface of the experimental sample is annealed towards the silicon holder, the sample exhibits good ohmic contact performance, otherwise, there is no ohmic contact property. The interfacial phase structure, composition, electrode film thickness and surface morphology were studied by X-ray diffraction (XRD) (XRD), X ray photoelectron spectroscopy (XPS),) scanning electron microscope (SEM) and atomic force electron microscopy (AFM). The addition of silicon element from silicon target plays a key role in the formation of ohmic contact during annealing. Then the ohmic contacts of Si/Ti/SiC system and Ni/SiC system were prepared on C plane of 4H-SiC and Ni/SiC system on Si surface. The specific contact resistivity was calculated by (TLM) method. The influence of surface morphology on ohmic contact properties was analyzed. Based on the study of ohmic contact, the photoconductive switch with the same plane transverse structure was fabricated on semi-insulating silicon carbide substrate, and the electrical properties of the photoconductive switch were analyzed. According to the characteristics of SiC photoconductive switch, a testing platform is set up. The electrical properties of the photoconductive switch with the same plane transverse structure are studied by using the Nd:YAG laser of 532nm wavelength as the trigger light source. It is obtained that the duration of the on-off pulse is less than 3ns, the rising edge time is less than 13ns, and the pulse width of the turn-on pulse signal is stable at 12ns, which is the same as the pulse width of the triggered laser pulse signal.
【学位授予单位】：上海师范大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM564
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