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异质结太阳能电池中硅片制绒尺寸的研究

发布时间:2019-03-08 21:22
【摘要】:摘要:本文中对N型掺杂的单晶硅硅片进行不同尺寸的制绒,然后使用等离子增强化学气相沉积法(PECVD)在制绒后的硅片表面沉积非晶硅薄膜,非晶硅薄膜和晶体硅构成非晶-晶体硅异质结。作者观察了未沉积非晶硅薄膜的硅片表面制绒尺寸,测试了制绒后晶体硅表面的反射率,以及沉积非晶硅薄膜之后表面的少子寿命,通过少子寿命来评估异质结太阳能电池的效率水平。最后讨论制绒尺寸对异质结太阳能电池的影响,得出4-6微米的金字塔尺寸最适合所选用的非晶硅工艺。
[Abstract]:Abstract: in this paper, N-doped monocrystalline silicon wafers were prepared with different sizes, and then amorphous silicon thin films were deposited on the surface of the silicon wafers by plasma-enhanced chemical vapor deposition (PECVD), and the amorphous silicon films were deposited on the surface of the silicon wafers by plasma enhanced chemical vapor deposition (PECVD). Amorphous silicon thin films and crystalline silicon form amorphous-crystalline silicon heterojunction. The size of non-deposited amorphous silicon films on the surface of silicon wafers was observed. The reflectivity of crystalline silicon surface after velvet deposition and the minority carrier life of the surface after deposition of amorphous silicon thin films were measured. The efficiency level of heterojunction solar cells is evaluated by minority carrier lifetime. Finally, the effect of velvet size on heterojunction solar cells is discussed, and it is concluded that the pyramid size of 4? 6 渭 m is the most suitable amorphous silicon process.
【学位授予单位】:复旦大学
【学位级别】:硕士
【学位授予年份】:2014
【分类号】:TM914.41

【参考文献】

相关期刊论文 前2条

1 吕衍秋;王妮丽;庄春泉;韩冰;李向阳;龚海梅;;微波反射光电导衰减法测量InGaAs吸收层的均匀性[J];半导体光电;2006年05期

2 刘艳红;刘爱民;;带有本征薄层的异质结太阳能电池[J];半导体技术;2010年01期



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