单晶硅电池中载流子复合的研究
发布时间：2019-04-02 14:10
【摘要】：单晶硅太阳能电池相比于其他光伏电池由于其较高的光电转换效率仍占据着大部分光伏市场份额。但是高昂的成本限制单晶硅太阳电池的大规模应用。随着生产工艺技术的发展,电池硅片将越来越薄。硅片厚度越低,表面复合对光生过剩载流子的寿命影响越大。因此研究单晶硅电池的体复合与表面复合行为,对提高电池的性能具有重要意义。准稳态光电导技术(QSSPC)因其不破坏样品形貌,不污染样品,成为广泛使用的表征样品少子有效寿命。首先,本文基于过剩载流子的产生与复合理论,分析了在不同注入水平下单晶硅体寿命的变化特性,并根据单晶硅中非平衡少数载流子的一维连续性方程与少子复合理论建立数学模型,在准稳态光电导测试模式下通过数值法解连续性方程,最终把表面复合速率和体寿命分离开。通过计算不同电阻率的P型单晶硅发现,在高注入情况下,比起恒定常数的体寿命,依赖于非平衡载流子浓度变化的体寿命严重影响载流子的分布。另外,研究不同滤光片对不同钝化膜的N型单晶硅的有效寿命的影响,通过对比分析出前后表面的表面复合速率的不同。研究了N型单晶硅丝网印刷铝浆在不同退火条件下有效寿命的变化,并找出最佳退火条件。
[Abstract]:Compared with other photovoltaic cells, monocrystalline silicon solar cells still account for most of the photovoltaic market because of their high photoelectric conversion efficiency. But the high cost limits the large-scale application of monocrystalline silicon solar cells. With the development of production technology, the silicon wafer of battery will be thinner and thinner. The lower the thickness of silicon wafer, the greater the influence of surface recombination on the lifetime of photogenerated excess carriers. Therefore, the study of bulk recombination and surface recombination of monocrystalline silicon cells is of great significance to improve the performance of the cells. Quasi-steady-state photoconductivity technique (QSSPC) is widely used to characterize the minority effective life of samples because it does not destroy the morphology of samples and pollute the samples. Firstly, based on the generation and recombination theory of excess carriers, the variation characteristics of the lifetime of single crystal silicon at different implantation levels are analyzed. According to the one-dimensional continuity equation of non-equilibrium minority carriers in monocrystalline silicon and the theory of minority carrier recombination, a mathematical model is established, and the continuity equation is solved by numerical method in quasi-steady-state photoconductivity test mode. Finally, the surface recombination rate and body life are separated. By calculating P-type monocrystalline silicon with different resistivity, it is found that the carrier distribution is seriously affected by the bulk lifetime dependent on the concentration of non-equilibrium carriers in the case of high injection, compared with the constant bulk lifetime. In addition, the effect of different filters on the effective life of N-type monocrystalline silicon with different passivation films is studied. The different surface recombination rates of the front and rear surfaces are compared and analyzed. The variation of effective life of N-type monocrystalline silicon screen printed aluminum paste under different annealing conditions was studied and the optimum annealing conditions were found.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TM914.41
本文编号：2452625
[Abstract]:Compared with other photovoltaic cells, monocrystalline silicon solar cells still account for most of the photovoltaic market because of their high photoelectric conversion efficiency. But the high cost limits the large-scale application of monocrystalline silicon solar cells. With the development of production technology, the silicon wafer of battery will be thinner and thinner. The lower the thickness of silicon wafer, the greater the influence of surface recombination on the lifetime of photogenerated excess carriers. Therefore, the study of bulk recombination and surface recombination of monocrystalline silicon cells is of great significance to improve the performance of the cells. Quasi-steady-state photoconductivity technique (QSSPC) is widely used to characterize the minority effective life of samples because it does not destroy the morphology of samples and pollute the samples. Firstly, based on the generation and recombination theory of excess carriers, the variation characteristics of the lifetime of single crystal silicon at different implantation levels are analyzed. According to the one-dimensional continuity equation of non-equilibrium minority carriers in monocrystalline silicon and the theory of minority carrier recombination, a mathematical model is established, and the continuity equation is solved by numerical method in quasi-steady-state photoconductivity test mode. Finally, the surface recombination rate and body life are separated. By calculating P-type monocrystalline silicon with different resistivity, it is found that the carrier distribution is seriously affected by the bulk lifetime dependent on the concentration of non-equilibrium carriers in the case of high injection, compared with the constant bulk lifetime. In addition, the effect of different filters on the effective life of N-type monocrystalline silicon with different passivation films is studied. The different surface recombination rates of the front and rear surfaces are compared and analyzed. The variation of effective life of N-type monocrystalline silicon screen printed aluminum paste under different annealing conditions was studied and the optimum annealing conditions were found.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TM914.41
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