新型太阳能电池对电极导电薄膜的性能研究
发布时间：2019-04-20 08:40
【摘要】：近年来,导电氧化物(TCO, Transparent Conductive Oxide)薄膜作为透明导电薄膜已在薄膜研究中占据主导地位,是材料科学中最重要的领域之一。其中氧化铟锡(ITO,In2O3:Sn)薄膜是目前研究和应用最广泛的透明导电薄膜之一。ITO薄膜具有立方体铁锰矿结构,禁带宽度为3.5eV,具有较高的功函数。因此其具有优异的光电特性,使其在平板液品显示器(LCD、薄膜晶体管(TFT)制造、红外辐射反射镜涂层、太阳能电池透明电极以及火车飞机玻璃除霜、建筑物幕墙玻璃等方面应用广泛。基于此,为满足作为新型太阳能电池对电极的要求,制备出同时具有高可见光透过率和高电导率的ITO透明导电薄膜是本论文研究的重点。制备ITO薄膜的主要方法有喷雾热解法,电子束蒸发法,溶胶-凝胶法,激光沉积法以及溅射法中的射频磁控溅射法,直流磁控溅射法,脉冲磁控溅射法。这些方法中,脉冲磁控溅射法不仅能克服等离子体不稳定、电弧放电、高沉积温度的缺点,而且沉积速率高均匀性好,可以在低温下较好的溅射于基底上。实验采用脉冲磁控溅射技术在普通载玻片玻璃、石英玻璃上制备了ITO透明导电薄膜。通过X射线衍射仪(XRD)、扫描电镜(SEM)对ITO薄膜的微观结构及表面形貌进行了分析,采用数字式四探针测试仪和UV-Vis分光光度计重点研究了溅射功率、溅射气压、溅射时间和衬底温度等工艺条件对ITO薄膜的光电性能的影响,旨在通过工艺参数的变化寻求高透过率与低方块电阻的最佳平衡点,以提高氧化铟锡(ITO)透明导电膜的光电性能,并对在不同基底下的ITO薄膜进行对比分析。在靶距为65mm,基底旋转速度为10r/min,背低真空为5×10-3Pa的条件下,研究了溅射气压、溅射功率、溅射时间和衬底温度对ITO薄膜性能的影响。研究结果表明：溅射功率45 W、溅射气压0.7 Pa、基底温度为300℃、溅射时间为45 min、以普通载玻片为基底的ITO薄膜可见光透过率达85%以上,方块电阻最小,达到5Ω/□左右。可以满足作为新型太阳能电池对电极的要求,达到了课题预想的目标。
[Abstract]:In recent years, as a transparent conductive thin film, conductive oxide (TCO, Transparent Conductive Oxide) thin film has played a leading role in thin film research and is one of the most important fields in material science. The indium tin oxide (ITO,In2O3:Sn) thin film is one of the most widely studied and applied transparent conductive films. Ito thin films have cubic ferromanganese structure with a band gap of 3.5eV and a high work function. As a result, it has excellent photoelectric properties that enable it to be used in flat panel liquid displays (LCD, thin film transistor (TFT), infrared radiation mirror coating, solar cell transparent electrodes and train and aircraft glass defrosting, Curtain wall glass and other aspects of buildings are widely used. Therefore, in order to meet the requirements of new solar cells as electrodes, the preparation of ITO transparent conductive thin films with high visible light transmittance and high conductivity is the focus of this paper. The main methods for preparing ITO films are spray pyrolysis, electron beam evaporation, sol-gel method, laser deposition, RF magnetron sputtering, DC magnetron sputtering and pulse magnetron sputtering. Among these methods, pulsed magnetron sputtering can not only overcome the disadvantages of plasma instability, arc discharge and high deposition temperature, but also have high uniformity of deposition rate, and can be sputtered on the substrate at low temperature. ITO transparent conductive thin films were prepared on glass and quartz glass by pulsed magnetron sputtering. The microstructure and surface morphology of ITO thin films were analyzed by X-ray diffractometer (XRD),) and scanning electron microscope (SEM). The sputtering power and sputtering pressure were studied by digital four-probe tester and UV-Vis spectrophotometer. The effects of sputtering time and substrate temperature on the optical and electrical properties of ITO thin films are studied in order to find the optimal balance between high transmittance and low block resistance by changing the process parameters. In order to improve the optical and electrical properties of indium tin oxide (ITO) transparent conductive film, the ITO thin films on different substrates were compared and analyzed. The effects of sputtering pressure, sputtering power, sputtering time and substrate temperature on the properties of ITO thin films were investigated under the conditions of 65 mm target distance, 10 r / min substrate rotation velocity and 5 脳 10-3Pa at low back vacuum. The effects of sputtering pressure, sputtering power, sputtering time and substrate temperature on the properties of ITO thin films were investigated. The results show that the visible light transmittance of ITO thin films with a sputtering power of 45 W, sputtering pressure of 0.7 Pa, at 300 鈩，
本文编号：2461458
[Abstract]:In recent years, as a transparent conductive thin film, conductive oxide (TCO, Transparent Conductive Oxide) thin film has played a leading role in thin film research and is one of the most important fields in material science. The indium tin oxide (ITO,In2O3:Sn) thin film is one of the most widely studied and applied transparent conductive films. Ito thin films have cubic ferromanganese structure with a band gap of 3.5eV and a high work function. As a result, it has excellent photoelectric properties that enable it to be used in flat panel liquid displays (LCD, thin film transistor (TFT), infrared radiation mirror coating, solar cell transparent electrodes and train and aircraft glass defrosting, Curtain wall glass and other aspects of buildings are widely used. Therefore, in order to meet the requirements of new solar cells as electrodes, the preparation of ITO transparent conductive thin films with high visible light transmittance and high conductivity is the focus of this paper. The main methods for preparing ITO films are spray pyrolysis, electron beam evaporation, sol-gel method, laser deposition, RF magnetron sputtering, DC magnetron sputtering and pulse magnetron sputtering. Among these methods, pulsed magnetron sputtering can not only overcome the disadvantages of plasma instability, arc discharge and high deposition temperature, but also have high uniformity of deposition rate, and can be sputtered on the substrate at low temperature. ITO transparent conductive thin films were prepared on glass and quartz glass by pulsed magnetron sputtering. The microstructure and surface morphology of ITO thin films were analyzed by X-ray diffractometer (XRD),) and scanning electron microscope (SEM). The sputtering power and sputtering pressure were studied by digital four-probe tester and UV-Vis spectrophotometer. The effects of sputtering time and substrate temperature on the optical and electrical properties of ITO thin films are studied in order to find the optimal balance between high transmittance and low block resistance by changing the process parameters. In order to improve the optical and electrical properties of indium tin oxide (ITO) transparent conductive film, the ITO thin films on different substrates were compared and analyzed. The effects of sputtering pressure, sputtering power, sputtering time and substrate temperature on the properties of ITO thin films were investigated under the conditions of 65 mm target distance, 10 r / min substrate rotation velocity and 5 脳 10-3Pa at low back vacuum. The effects of sputtering pressure, sputtering power, sputtering time and substrate temperature on the properties of ITO thin films were investigated. The results show that the visible light transmittance of ITO thin films with a sputtering power of 45 W, sputtering pressure of 0.7 Pa, at 300 鈩，
本文编号：2461458
本文链接：https://www.wllwen.com/kejilunwen/dianlilw/2461458.html
教材专著
