双层SiN_x膜多晶硅太阳电池抗PID性能研究

发布时间：2019-07-20 07:57

【摘要】：以双层Si Nx膜多晶硅太阳电池为研究对象,通过调整PECVD工艺参数制备不同折射率和厚度的双层氮化硅减反射膜太阳电池,并用玻璃、EVA和背板等将电池片封装成光伏组件,进行85℃、85%RH条件下组件电势诱导衰减(PID)实验。研究结果表明:(1)改变内层折射率和厚度保持外层较低的折射率时,双层氮化硅膜太阳电池均会发生严重的PID效应;(2)但随着外层折射率提高,电池PID效应显著减小,外层折射率≥2.15的电池PID实验600 h功率衰减小于5%;(3)双层氮化硅膜抗PID太阳电池的转化效率略低于普通太阳电池,但其组件的封装损失较小,与普通电池的组件功率相当,因此具有很好的应用前景。
[Abstract]:Taking the double-layer Si Nx film polysilicon solar cell as the research object, the double-layer silicon nitride antireflective film solar cell with different refractive index and thickness was prepared by adjusting the process parameters of PECVD. The cell was packaged into photovoltaic module with glass, EVA and backboard, and the potential induced attenuation (PID) experiment of the module was carried out at 85 鈩，

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