W波段MMIC混频器研制

发布时间：2017-12-30 19:31

本文关键词：W波段MMIC混频器研制　出处：《电子科技大学》2016年硕士论文　论文类型：学位论文

【摘要】：InP基HEMT器件具有高截止频率、高增益、高热导率和低噪声等特点,其在毫米波高频段电路系统中的应用受到了越来越广泛的关注。其中,单片集成MMIC混频器(Mixer)是前端收发系统的核心电路之一,它所起的作用是完成频谱搬移的工作,其性能好坏会对通讯系统的质量带来直接影响。直至目前,对于W波段系统,如何在降低电路复杂度的同时还能获得高性能的MMIC混频器,仍然是一项极具挑战性的课题。本文基于中科院微电子研究所自主制备的100-nm栅长InP基HEMT器件,对W波段平衡式电阻型混频器及镜像抑制电阻型混频器的关键性能展开研究。首先从W波段MMIC混频器的研究近况开始,详细介绍了InP基HEMT的工作机制、工艺流程及器件模型的提取工作。紧接着以HEMT器件为核心,对电阻型混频单元的混频机制进行解释,并在此基础上,设计了单端电阻型混频器,联合仿真结果:在固定栅压VG=-0.6 V,输入LO=10 dBm@94 GHz,RF=-10 dBm@96GHz时,变频损耗达到最小7 dB,但本振-射频的隔离度效果表现不佳,仅有10 dB。针对单端电阻型混频器的隔离度较差问题,本文通过Lange电桥引入平衡结构,研制了平衡式电阻型混频器。在与单端混频器相同的本振和射频信号驱动下,其联合仿真结果:变频损耗为8 dB,本振-射频的隔离度得到大幅提升至32 dB。随后,结合Lange电桥和Wilkinson功分器,研制了一款镜像抑制混频器,联合仿真结果:变频损耗为8 dB左右,镜像抑制度在工作频率范围内大于20 dB。为了便于同其他电路级联组成系统,本文还对波导-微带过渡电路型的封装模块展开了研究,提出采用扇形结构探针来耦合波导中的TE10模以拓展工作带宽,仿真结果:在工作频率83~106 GHz范围内,回波损耗20 dB,插损0.2 dB,带内不平坦度1 dB。之后将平衡式MMIC混频器装配到封装模块中进行联合仿真,变频损耗在工作带宽内小于12 dB。最后,对流片出来的平衡式电阻型混频器进行在片测试。实际测试结果:在LO=10dBm@94 GHz,RF=-10 dBm的驱动下,中频输出4 GHz范围内,变频损耗小于12 dB,LO-RF的隔离度大于20 dB。
[Abstract]:InP based HEMT devices with high cut-off frequency, high gain, high thermal conductivity and low noise characteristics, its application in millimeter wave high frequency circuit in the system has attracted more and more attention. Among them, the monolithic integrated MMIC mixer (Mixer) is the core of a circuit front-end transceiver system, the role of it is the spectrum shifting work, its performance will bring direct influence on the quality of communication system. Until now, the W band MMIC mixer system, how to reduce the circuit complexity and can obtain high performance, is still a challenging task. In this paper, the 100-nm gate length InP based HEMT Institute of microelectronics devices study of self prepared based on the study of key performance inhibition resistive mixer of W band balanced resistive mixer and mirror. Firstly, the current research at W band MMIC mixer, with medium Introduces the working mechanism of InP based HEMT model, extraction process and device. Followed by the HEMT device as the core, mixing mechanism of resistance type mixing units are explained, and on this basis, the design of single end resistance type mixer, combined with simulation results: fixed gate voltage VG=-0.6 V input LO=10 dBm@94 GHz, RF=-10 dBm@96GHz, reached the minimum conversion loss of 7 dB, but the performance of the vibration isolation effect of RF is poor, only 10 dB. isolation problem for single ended resistive mixer, this paper introduced the balanced Lange bridge structure, developed a balanced resistive mixer. In the same vibration and single end mixer the RF signal and driven by the combined simulation results: the conversion loss is 8 dB, the oscillator RF isolation has increased substantially to 32 dB. then, combined with the Lange bridge and Wilkinson power divider, a mirror suppression is developed Mixer, joint simulation results: conversion loss is about 8 dB, the image rejection degree in the frequency range of more than 20 dB. in order to facilitate with other circuit cascade system, this paper also package module of waveguide to microstrip transition circuit is studied, the fan-shaped structure probe of TE10 coupling waveguide to expand the bandwidth, the simulation results in 83~106 frequency range of GHz, the return loss of 20 dB, the insertion loss is 0.2 dB, in band flatness of 1 dB. after the co simulation of MMIC balance mixer assembly encapsulation module, conversion loss in the working bandwidth is less than 12 dB. at last, balanced resistive mixer chip out in the test. The actual test results: in LO=10dBm@94 GHz, RF=-10 dBm driver, if output in the range of 4 GHz, the conversion loss is less than 12 dB LO-RF, the isolation is greater than 20 dB.

【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN773

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