GeOI MOSFET器件模型及表面预处理技术研究

发布时间：2018-01-03 20:27

本文关键词：GeOI MOSFET器件模型及表面预处理技术研究　出处：《华中科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：为了克服Si基MOSFET的物理极限,满足下一代CMOS集成电路低功耗,高性能的要求,绝缘层上硅(SOI)结构MOSFET被认为是未来具有较大潜力的MOS器件。高k栅介质的应用也使得高迁移率的Ge取代Si作为MOSFET的沟道材料成为现实。因此既具有SOI结构优势,又满足高迁移率的绝缘层上锗(GeOI)MOSFET引起了广泛的兴趣。然而,高k栅介质与Ge沟道之间易形成不稳定的GeOx氧化物,引起GeOI MOSFET的性能退化。因此本文主要围绕Ge/高k栅介质的界面特性展开研究,探讨了La AlON和La SiON两种高k栅介质与Ge接触的界面特性以及以HfON为高k栅介质时,采用YON钝化层对界面特性的影响。两组实验均探讨了等离子体表面处理对界面特性的影响。理论方面,研究了GeOI MOSFET阈值电压和亚阈斜率模型以及量子效应对电特性的影响。理论方面开展的工作有:(1)通过对沟道区的二维泊松方程的求解,并且考虑栅电极与源漏区表面产生的所有边缘电容对沟道电势的影响建立了阈值电压和亚阈斜率模型。基于此模型,研究了边缘电容对阈值电压和亚阈斜率的影响;(2)采用密度梯度模型研究了量子效应对亚阈斜率,漏致势垒降低(DIBL)效应,阈值电压和通断态电流的影响。仿真结果表明,量子效应对前栅电学控制能力产生影响,使DIBL效应增强,阈值电压增大,通断态电流减小。实验方面开展的工作有:(1)研究不同的高k栅介质La AlON和La Si ON以及在溅射高k栅介质之前的不同的等离子体处理气体(N2,NH3)对Ge MOS电容界面特性的影响。实验研究表明,NH3等离子体处理并溅射La AlON高k栅介质的Ge MOS电容有最好的界面特性;(2)以HfON为高k栅介质,研究YON钝化层以及溅射YON钝化层后等离子体处理对界面特性的影响。结果表明,溅射YON钝化层的样品比没有钝化层的好,既溅射YON钝化层又进行等离子体处理的样品有最好的界面特性。
[Abstract]:In order to overcome the physical limits of MOSFET Si based, to meet the next generation of CMOS integrated circuits with low power consumption, high performance requirements of silicon on insulator (SOI) structure of MOSFET is considered to be the future MOS devices have great potential. The application of high k gate dielectric has a high mobility of Ge to replace Si as the channel material MOSFET to become a reality. So it has SOI structure advantages, but also meet the insulation layer of germanium high mobility MOSFET (GeOI) has attracted wide interest. However, GeOx oxide unstable easily formed between high k gate dielectric and Ge channel, causing performance degradation of GeOI MOSFET. This paper mainly focuses on the interface characteristics around the Ge/ high k gate dielectric, discusses the interface properties of La AlON and La SiON two medium and Ge high k gate contact and HfON high k gate dielectric, the effects of YON passivation layer on interface characteristics. Two sets of experiments were discussed at the surface of the plasma The effect on interfacial properties. In theory, the effect of GeOI MOSFET threshold voltage and sub threshold slope model and quantum effects on the electrical characteristics. The theory research work are: (1) by solving the two-dimensional Poisson equation of the channel region, all edge capacitance and consider the gate electrode and the source region the surface leakage of the channel potential established slope threshold and sub threshold voltage model. Based on this model, studied the effect of capacitance on the edge slope threshold and sub threshold voltage; (2) to study the quantum effects on the subthreshold slope by density gradient model, drain induced barrier lowering (DIBL) effect, effect of threshold voltage and the on-off state current. The simulation results show that the quantum effects of front gate electrical control ability, the DIBL effect, the threshold voltage increases, the on-off state current decreases. The contents are as follows: (1) of different K La AlON and La Si gate dielectric and ON in different gas plasma treatment before sputtering high k gate dielectric (N2, NH3) effect on the interface properties of Ge MOS capacitor. The experimental results show that Ge MOS and La NH3 plasma sputtering capacitor AlON high k gate dielectric interface characteristics of the best (2;) with HfON high k gate dielectric, YON passivation layer and sputtering YON passivation layer after the effect of plasma treatment on the interfacial properties. The results showed that the sputtered YON passivation layer than samples without the passivation layer, both sputtering YON passivation layer of the plasma treated sample has the best properties of the interface.

【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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