有机薄膜晶体管的模拟研究

发布时间：2018-01-04 08:37

本文关键词：有机薄膜晶体管的模拟研究　出处：《江南大学》2015年硕士论文　论文类型：学位论文

【摘要】：由于可以通过简单的工艺实现,薄膜晶体管自诞生以来就受到了广泛关注,有机薄膜晶体管更是由于其材料的易合成、环境友好、可制造成柔性器件等优点成为了重要的研究课题。虽然近几十年来有机薄膜晶体管在迁移率等方面的特性已经取得了很大的研究进展,但是关于有机薄膜晶体管的理论研究尚不成熟,本文列举了一些关于有机材料的载流子输运模型以及单双栅有机薄膜晶体管的直流电流电压模型,并使用器件模拟工具Silvaco对有机薄膜晶体管进行了模拟研究。器件模拟可以在不制造出实际器件的前提下模拟分析器件的物理特性和电学特性,既节约成本又能提高效率。本文使用器件模拟软件Silvaco对有机薄膜晶体管进行了模拟研究,研究主要分为以下几个方面:(1)模拟研究了沟道长度、有源层厚度、绝缘层厚度、绝缘层介电常数以及缺陷态分布对器件输出特性的影响,特别对比分析了单双栅有机薄膜晶体管的特性,并探讨了电极厚度对双栅器件输出特性的影响。(2)模拟研究了小尺寸有机薄膜晶体管的短沟道效应,分析了降低短沟道效应的方法,并探讨了栅极与源漏电极交叠长度对器件截止频率的影响。(3)实现了由有机薄膜晶体管搭建的反相器电路,使用atlas的混仿模式模拟分析了4种不同的反相器电路:由p型有机薄膜晶体管和n型IGZO薄膜晶体管共同构成的反相器电路、单独由2个或4个单栅有机薄膜晶体管构成的反相器电路以及仅由两个p型双栅有机薄膜晶体管构成的反相器电路。并在此基础上模拟研究了由有机薄膜晶体管搭建的“与非”门、“或非”门电路。综合以上三个方面的模拟结果表明双栅有机薄膜晶体管在输出特性、短沟道特性以及门电路实现等方面均优于单栅有机薄膜晶体管。
[Abstract]:Thin film transistors have attracted extensive attention since their birth because they can be realized by simple technology. Organic thin film transistors are more environmentally friendly because of their easy synthesis. Fabrication of flexible devices has become an important research topic, although in recent decades, the characteristics of organic thin film transistors in mobility and other aspects have made great progress. However, the theoretical study of organic thin film transistors is not yet mature. In this paper, some carrier transport models of organic materials and DC current voltage models of single and double gate organic thin film transistors are listed. The device simulation tool Silvaco is used to simulate the organic thin film transistor. The device simulation can simulate and analyze the physical and electrical characteristics of the device without making the actual device. Both cost saving and efficiency can be improved. In this paper, the organic thin film transistors are simulated by the device simulation software Silvaco. The influence of channel length, thickness of active layer, thickness of insulation layer, dielectric constant of insulation layer and distribution of defect state on the output characteristics of the device are studied by simulation. In particular, the characteristics of single and double gate organic thin film transistors are compared and analyzed, and the effect of electrode thickness on the output characteristics of double gate devices is discussed. (2) the short channel effect of small scale organic thin film transistors is studied by simulation. The method of reducing short channel effect is analyzed, and the effect of the overlap length of gate and source leakage electrode on the cutoff frequency of the device is discussed. The inverter circuit constructed by organic thin film transistor is realized. In this paper, four different inverter circuits are simulated and analyzed by using the mixed mode of atlas. The inverters are composed of p-type organic thin film transistors and n-type IGZO thin film transistors. Two or four single gate organic thin film transistors and only two p-type double gate organic thin film transistors are used to simulate and study the organic thin film transistors. "built." And not the door. Synthesizing the simulation results of the above three aspects, the results show that the double gate organic thin film transistors are superior to the single gate organic thin film transistors in output characteristics, short channel characteristics and gate realization.
【学位授予单位】：江南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN321.5

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