铸锭法中籽晶、成核点及坩埚底部设置方法专利技术综述

发布时间：2018-01-05 02:37

  本文关键词：铸锭法中籽晶、成核点及坩埚底部设置方法专利技术综述　出处：《中国材料进展》2017年04期 　论文类型：期刊论文

  更多相关文章： 铸锭法 硅 晶体 成核 籽晶 坩埚

【摘要】：近年来,随着太阳能电池技术在中国的迅猛发展,晶体硅制造技术也逐渐发展起来。铸锭法作为晶体硅的主要制备方法之一,其发展方向受到了国内外的普遍关注。本文在调研大量国内外相关专利技术的基础上,综述了近几十年来国内外研究机构在铸锭法制备晶体硅方面所采用的技术手段,主要归类为以下三个方面:籽晶、成核点和坩埚底部设置。通过对比国内外技术以及分析国内重要申请人的专利申请,寻找国内外技术差距和国内技术演进方向,在如何调节晶粒生长速度、降低晶体的缺陷密度、提高晶体质量以适应太阳能电池的制造等亟需解决的技术问题方面提出一些方案。
[Abstract]:In recent years, with the rapid development of solar cell technology in China, crystal silicon manufacturing technology has been gradually developed. Ingot method as one of the main preparation methods of crystal silicon. The direction of its development has received widespread attention at home and abroad. This paper investigates a large number of domestic and foreign related patent technology on the basis of. The technical methods used by domestic and foreign research institutions in the preparation of crystal silicon by ingot method in recent decades are reviewed. The main methods are classified as three aspects: seed crystal. By comparing the domestic and foreign technology and analyzing the patent application of the important domestic applicants, we can find out the technology gap and the direction of the domestic technology evolution, and how to adjust the grain growth rate. Some technical problems which need to be solved such as reducing the density of crystal defects and improving crystal quality to adapt to the manufacture of solar cells are put forward.
【作者单位】： 国家知识产权局专利局专利审查协作江苏中心;
【分类号】：TM914.4;TN304.12
【正文快照】： 游巧1前言晶体硅作为目前最主要的太阳能电池原料,其质量直接影响到太阳能电池的光电转换效率,受到了人们广泛关注。提拉法和铸锭法是目前晶体硅制备方法中最常见的两种方法。提拉法具有产率低、成本高等缺点,使得成本低、产率高且氧含量低的铸锭法迅速发展起来。然而,硅晶铸，

本文编号：1381235