掺铒聚合物狭缝波导放大器的增益特性研究（英文）

发布时间：2018-01-05 08:15

本文关键词：掺铒聚合物狭缝波导放大器的增益特性研究（英文）　出处：《发光学报》2017年02期 　论文类型：期刊论文

【摘要】：设计了一种高浓度稀土铒掺杂聚合物填充硅狭缝结构的平面光波导放大器(工作波长1 550 nm,泵浦波长1 480 nm),能够在低泵浦下获得高增益,可以应用于硅基光互联的损耗补偿。通过扫描电镜照片观察发现,合成的铒掺杂聚合物材料具有良好的纳米狭缝填充能力。考虑铒离子的合作上转换和激发态吸收,利用铒离子四能级跃迁模型,建立原子速率方程和光功率传输方程,数值仿真分析了聚合物光学性质、狭缝波导结构参数及信号光泵浦光功率等放大器增益特性的影响因素。这种具有纳米截面尺寸的光波导放大器,获得4.5 d B的信号光相对增益仅需要1.5 m W的泵浦光,展现了良好的集成光学应用前景。为了进一步提高增益,引入了多层狭缝结构,四层狭缝波导的重叠积分因子比一层狭缝的高42%。
[Abstract]:A planar optical waveguide amplifier with high concentration of rare earth erbium doped polymer filled with silicon slit structure is designed. The operating wavelength is 1 550 nm and the pump wavelength is 1 480 nm. It can obtain high gain under low pump and can be used to compensate the loss of silicon based optical interconnection. The synthesized erbium-doped polymer materials have good nano-slit filling ability. Considering the cooperative up-conversion and excited state absorption of erbium ions, the four-level transition model of erbium ions is used. The atomic rate equation and optical power transmission equation are established and the optical properties of the polymer are numerically simulated. The structure parameters of slit waveguide and the influence factors of gain characteristics of the amplifier, such as signal optical pump power, this kind of optical waveguide amplifier with nanometer cross section size. The relative gain of 4.5 dB signal requires only 1.5 MW pump light, which shows a good prospect of integrated optical application. In order to further improve the gain, a multi-layer slit structure is introduced. The overlapping integral factor of the four-layer slit waveguide is 42 times higher than that of one slit.
【作者单位】：深圳大学电子科学与技术学院广东省微纳光机电工程技术重点实验室光电子器件与系统教育部/广东省重点实验室;吉林大学电子科学与工程学院集成光电子学国家重点联合实验室吉林大学实验区吉林省光通信用聚合物波导器件工程实验室;
【基金】：国家自然科学基金(11274247,11574218,11504243,61475061) 广东省自然科学基金(2016A030313042,2015A030310400)资助项目~~
【分类号】：TN722
【正文快照】： lasers,modulators,el ave been devot-active materi-without pol80 nm slot espectively.Th Properties for Slot Waveg rrespondingFu 1 Introduction Silicon-based on-chip optoelectronic devices,with advantages of high speed,large bandwidth,and compatibi

【相似文献】