大功率碳化硅二极管和JFET模块的研究

发布时间：2018-01-06 16:15

本文关键词：大功率碳化硅二极管和JFET模块的研究　出处：《浙江大学》2015年硕士论文　论文类型：学位论文

更多相关文章： 碳化硅 二极管 JFET 功率模块

【摘要】：碳化硅(SiC)电力电子器件作为目前发展最为成熟的宽禁带半导体功率器件,在高压、大电流以及高频的电力电子技术领域具有巨大的应用潜力。目前,很多厂商都推出了商业化的碳化硅肖特基势垒二极管(SBD)和碳化硅结型场效应晶体管(JFET)器件,然而,由于单极性器件的特性和碳化硅材料、器件工艺的限制,这些器件的最高电压电流等级往往在1200V/50A以下。为了实现碳化硅功率器件在高压大容量电路中的应用,将器件并联实现模块化十分必要。本文首先给出了碳化硅器件外延层设计的理论方法,介绍了一种自主研制的碳化硅二极管和JFET芯片的结构和制备流程,并且基于探针台对这些芯片进行了测试分析。然后基于以上自主研制的芯片,进行了碳化硅器件模块化的设计和相应的热仿真,并且对多芯片并联的优化进行了讨论分析,成功制备了3500V/15A的全碳化硅功率模块、4500V/150A的碳化硅二极管模块和4500V/50A的碳化硅JFET模块,最后设计了JFET功率模块的驱动电路并进行了相应的静态和动态开关测试。测试结果表明,制备模块具备了相应的电流导通和电压阻断能力,同时开关特性良好,模块的容量为目前国内已报道的基于自主碳化硅芯片模块中的最高水平。
[Abstract]:Silicon Carbide (sic) power electronic devices, as the most mature wide gap semiconductor power devices, have great application potential in the field of high voltage, high current and high frequency power electronics. Many manufacturers have introduced commercial silicon carbide Schottky barrier diodes (SBD) and silicon carbide junction type field effect transistors (JFETs) devices, however, due to the characteristics of unipolar devices and silicon carbide materials. In order to realize the application of silicon carbide power devices in high-voltage and high-capacity circuits, the maximum voltage and current levels of these devices are often below 1200 V / 50 A due to the limitation of device technology. It is necessary to modularize the devices in parallel. In this paper, the theoretical method of epitaxial layer design for silicon carbide devices is presented, and the structure and fabrication process of a self-developed silicon carbide diode and JFET chip are introduced. These chips are tested and analyzed based on the probe table. Then, based on the self-developed chip, the modularization design and the corresponding thermal simulation of silicon carbide device are carried out, and the optimization of multi-chip parallel connection is discussed and analyzed. The silicon carbide diode module of 3500V / 15A and the silicon carbide JFET module of 4500V / 150A and 4500V / 50A are successfully fabricated. Finally, the driving circuit of the JFET power module is designed and the corresponding static and dynamic switching tests are carried out. The test results show that the fabricated module has the corresponding current conduction and voltage blocking capability. At the same time, the switch characteristics are good, the capacity of the module is the highest level of the domestic reported modules based on autonomous silicon carbide chip.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN31

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