红外多波段阵列有源光电标识技术研究
发布时间:2018-01-07 22:05
本文关键词:红外多波段阵列有源光电标识技术研究 出处:《中北大学》2015年硕士论文 论文类型:学位论文
更多相关文章: 有源光电标识 目标识别 动态标识图形 红外LED MEMS红外光源
【摘要】:红外光电标识作为有源标识技术的重要支撑,其独特的夜视性,穿透能力强,安全隐蔽性高。在目标身份识别领域的非协作式识别方式中起着举足轻重的作用,随着识别环境的日益复杂,单一的红外光电标识装置已经不能满足。开展红外多波段阵列有源光电特征标识技术的研究,集合短波红外、中波红外和长波红外的有源标识装置在目标身份识别领域有着重要的意义和应用场合。 在短波红外方面的选取仿流明红LED作为标识光源,其辐射中心波长为940nm;对仿流明红LED的伏安特性、电光转化特性和响应时间等特性进行分析,仿流明红LED的红外辐射功率受驱动电流的影响,在700mA驱动电流作用下,其相对辐射功率达到38W/cm2。中波和长波红外的标识光源,选取用MEMS工艺制作的具有微米级的能辐射中波和长波红外光源的MEMS红外光源,,其光谱分布范围为2~14μm,存在两个辐射峰值;红外辐射效率随着驱动电压的增大可以达到10.85%。选用车载12V或24V电源对多波段标识装置进行供电,设计基于线性ADP3336稳压芯片和LM2576HV-12芯片的光源阵列驱动电路,多波段阵列标识装置的光源阵列有平面阵列和三维阵列两种;对光源阵列进行动态标识图形编码调制,三维阵列拥有着空间上和光源频率上的动态变化,实现频率和空间上的混合动态标识图形编码调制,有效的提高标识图形的安全性。 在不同的背景下,采用不同的红外热像仪,对动态标识图形的标识效果进行观察,夜晚的标识效果优于白天的标识效果,长波红外标识在白天几乎无法辨别;白天背景环境对标识装置的影响要大于夜晚背景环境对标识装置的影响;三维阵列的标识效果要优于平面阵列的标识效果;在500m探测距离可以清晰的观察到动态标识图形,在2km的距离下可以明显的辨别出标识装置,光源阵列的闪烁频率在小于50Hz时可以明显辨别,总体识别效果良好。为红外多波段有源光电标识技术在目标识别领域的应用提供了理论依据。
[Abstract]:As an important support of active identification technology, infrared photoelectric marking has its unique night vision, strong penetration ability, high security and concealment. It plays an important role in non-cooperative identification in the field of target identification. With the increasing complexity of the recognition environment, the single infrared photoelectric marking device can not be satisfied. The research of infrared multi-band array active photoelectric characteristic marking technology is carried out, which gathers short-wave infrared. The active identification device of medium wave infrared and long wave infrared has important significance and application in the field of target identification. In the aspect of short wave infrared, the imitated lumen red LED is selected as the identification light source, and its central wavelength is 940nm; The characteristics of volt-ampere, electro-optic conversion and response time of imitating lumen red LED are analyzed. The infrared radiation power of imitated lumen red LED is affected by driving current, under the action of 700mA driving current. The relative radiation power is 38 W / cm 2. The medium wave and long wave infrared identification light source is selected. The MEMS infrared light source with micron level radiation medium wave and long wave infrared light source is selected by MEMS process. The spectral distribution ranges from 2 渭 m to 14 渭 m, and there are two peak radiation peaks. The infrared radiation efficiency can reach 10.85 with the increase of driving voltage. The multi-band marking device can be powered by 12V or 24V power supply. The driving circuit of light source array based on linear ADP3336 and LM2576HV-12 chip is designed. There are two kinds of light source array of multi-band array identification device: planar array and three-dimensional array. The dynamic identification graphics coding modulation is carried out for the light source array, and the three-dimensional array has the dynamic changes in space and light source frequency, so the hybrid dynamic identification graphics coding modulation is realized in the frequency and space. Effectively improve the security of logo graphics. Under different background, using different infrared thermal imager to observe the marking effect of dynamic marking graphics, the marking effect of night is better than that of day, and the long wave infrared sign is almost impossible to distinguish during the day. The influence of daytime background environment on marking device is greater than that of night background environment on marking device. The identification effect of 3D array is better than that of planar array. The dynamic identification pattern can be clearly observed in the 500m detection range, and the marking device can be clearly identified at a distance of 2 km. The flicker frequency of the light source array can be clearly distinguished when the frequency of the light source array is less than 50 Hz. It provides a theoretical basis for the application of infrared multi-band active photoelectric marking technology in the field of target recognition.
【学位授予单位】:中北大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TN219
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