FinFET SRAM总剂量效应研究

发布时间：2018-01-08 09:08

本文关键词：FinFET SRAM总剂量效应研究　出处：《西安电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：SRAM是航天电子系统中关键的辐射敏感芯片。当前,CMOS集成电路工艺已推进到16nm,器件结构演变为三栅结构的FinFET,由于器件结构发生了显著变化,其辐射效应也不同于平面栅结构的MOSFET,开展基于FinFET的SRAM辐射效应研究十分必要。论文从总剂量效应损伤机理出发,采用Sentaurus TCAD软件,建立了FinFET器件三维模型,开展了FinFET器件总剂量效应仿真分析,并同平面结构MOSFET的总剂量效应仿真结果进行了对比,结果表明FinFET器件抗总剂量的水平优于普通MOS器件。以器件级仿真结果为基础,采用Candence软件工具,开展了SRAM中存储单元、读出放大电路等敏感电路的仿真分析,获得了敏感电路的电学性能变化和漏电流变化;以电路仿真结果为基础,分析总结了SRAM芯片的最劣偏置状态,依据GJB-548B方法中的1019.2试验标准,提出了针对FinFET SRAM芯片总剂量效应试验方案,给出了实验流程,探讨了当前可采用的实验装置开发策略。论文获得的主要研究成果有:1.FinFET器件的抗总剂量水平优于MOS器件,其抗总剂量水平可以达到480Krad(SiO_2);2.在FinFET SRAM总剂量试验中,需要重点关注总剂量辐射下存储阵列和灵敏放大器的电学参数和功能参数变化情况;3.创新性提出了FinFET SRAM总剂量效应试验方案,并针对该方案给出了FinFET SRAM总剂量试验流程,初步探讨了总剂量试验的试验系统。
[Abstract]:SRAM is the key radiosensitive chip in aerospace electronic system. At present, the integrated circuit technology has been advanced to 16nm, and the device structure has evolved into a three-gate FinFET. Because of the remarkable changes in the device structure, the radiation effect is different from that of the planar gate structure (MOSFET). It is very necessary to study the radiation effect of SRAM based on FinFET. This paper starts from the mechanism of total dose effect damage and adopts Sentaurus TCAD software. The three-dimensional model of FinFET device is established and the simulation analysis of total dose effect of FinFET device is carried out. The simulation results of total dose effect of planar structure MOSFET are compared. The results show that the total dose level of FinFET devices is better than that of ordinary MOS devices. Based on the simulation results at device level, the memory cells in SRAM are developed by using Candence software tools. Through the simulation and analysis of sensitive circuits such as readout amplifiers, the changes of electrical performance and leakage current of the sensitive circuits are obtained. Based on the result of circuit simulation, the worst bias state of SRAM chip is analyzed and summarized. According to the test standard of 1019.2 in GJB-548B method. A total dose effect test scheme for FinFET SRAM chip is proposed, and the experimental flow is given. The main research results obtained in this paper are as follows: 1. The total dose level of FinFET devices is better than that of MOS devices. Its total dose level can reach 480 Krada SiO2s; 2. In the total dose test of FinFET SRAM, it is necessary to focus on the changes of electrical and functional parameters of memory array and sensitive amplifier under total dose radiation. 3. The total dose effect test scheme of FinFET SRAM is put forward, and the total dose test flow of FinFET SRAM is given. The test system of total dose test is discussed.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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