分子自组装在有机场效应晶体管中的应用

发布时间：2018-01-09 04:04

本文关键词：分子自组装在有机场效应晶体管中的应用　出处：《重庆大学》2015年硕士论文　论文类型：学位论文

【摘要】：尽管有机场效应晶体管(OFET)的综合性能已经有了很大的提高,但就器件的总体发展水平而言,有机场效应晶体管的性能还不能满足商业化的要求。限制有机场效应晶体管应用的因素之一是器件的载流子迁移率不高,因此本文就器件的载流子迁移率以及开关电流比偏低的问题对器件的制备工艺进行优化。研究内容主要集中在利用分子自组装薄膜来修饰栅绝缘层的表面,期望自组装分子薄膜的存在能提高有机场效应晶体管的载流子迁移率以及开关电流比。主要研究内容如下:文章的第一部分介绍了有机场效应晶体管的研究进展,叙述了器件的工作原理、表征参数、半导体薄膜的制备工艺以及器件性能的影响因素。此外还介绍了分子自组装技术包括分子自组装的机理、自组装的方法,综述了分子自组装在有机场效应晶体管中的应用。文章的第二部分详细讨论了十三氟辛基三甲基氧基硅烷(PFTS)、9-蒽甲基磷酸(AYPA)、3-氨基丙基三甲氧基硅烷(ATS)三种自组装分子对石墨烯场效应晶体管性能的影响。采用底栅顶接触式结构以石墨烯为有源层,Si O2为绝缘层。研究结果表明,经自组装分子AYPA、PFTS、ATS修饰绝缘层后,器件的载流子迁移率有了明显的提高,器件的最大空穴迁移率可达2904 cm2V-1s-1,电子迁移率可达2243 cm2V-1s-1。文章的第三部分重点讨论了ADO-PA自组装分子对红荧烯器件性能的影响。以Si O2为绝缘层,红荧烯作为有源层,采用底栅顶接触式结构制备有机场效应晶体管。研究结果表明,经ADO-PA自组装分子修饰绝缘层后,器件的性能有了明显的提升,载流子迁移率可达0.18 cm2V-1s-1,开关电流比为2.2×105。
[Abstract]:Although the overall performance of the Airport effect Transistor (OFET) has been greatly improved, but the overall development level of the device. The performance of FET can not meet the requirements of commercialization. One of the factors limiting the application of FET is the low carrier mobility of devices. Therefore, the fabrication process of the device is optimized for the low carrier mobility and the switching current ratio. The research focuses on the molecular self-assembly film to modify the surface of the gate insulation layer. It is expected that the existence of self-assembled molecular thin films can improve the carrier mobility and the switching current ratio of the airfield effect transistors. The main research contents are as follows:. In the first part of this paper, the research progress of the field effect transistors is introduced. The working principle, characterization parameters, preparation process of semiconductor film and the influencing factors of device performance are described. In addition, the molecular self-assembly technology including the mechanism of molecular self-assembly and the method of self-assembly are also introduced. The application of molecular self-assembly in airfield effect transistors is reviewed. In the second part of the paper, the 13 fluorooctyl trimethoxysilane (PFTS) 9-anthracene methyl phosphoric acid (AYPA) is discussed in detail. The effect of three kinds of self-assembled molecules on the performance of graphene field effect transistors was studied. The bottom gate top contact structure was used to use graphene as the active layer. The results show that the carrier mobility of the device is improved obviously after the self-assembled molecule AYPA-PFTSU ATS is used to modify the insulator layer. The maximum hole mobility of the device can reach 2904 cm2V-1s-1. The electron mobility can reach 2243 cm2V-1s-1.In the third part of this paper, the effect of ADO-PA self-assembled molecules on the properties of red fluorene devices is discussed. Sio _ 2 is used as the insulating layer. As an active layer, red fluorene is used to fabricate the airport effect transistor with bottom gate top contact structure. The results show that the performance of the device is improved obviously after modified by ADO-PA self-assembly molecule. The carrier mobility can reach 0.18 cm2V-1s-1 and the switching current ratio is 2.2 脳 105.
【学位授予单位】：重庆大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

【相似文献】