双控石墨烯超材料太赫兹调制器的双频反射特性（英文）

发布时间：2018-01-10 23:05

本文关键词：双控石墨烯超材料太赫兹调制器的双频反射特性（英文）　出处：《山东科技大学学报(自然科学版)》2016年06期 　论文类型：期刊论文

【摘要】：设计了双控太赫兹超材料调制器,并研究了其在太赫兹频段内两个频率处的反射特性。该调制器由开口环谐振器及其底部的"三明治"结构组成,"三明治"结构从上到下依次为石墨烯层、聚酰亚胺层和金层,其中开口谐振器的开口处填充硅。该结构可以通过电、光两种方式调制,即分别对调制器中的石墨烯施加低电压,对硅施加弱光照。结果显示:反射谱在频率0.806THz、1.869THz出现两个共振反射谷,在满足低激励的条件下,增强两种激励均能改变共振反射谷的反射强度。两个共振处的反射调制方向表现出先反向、后同向的特点,其临界点对应的石墨烯费米能级和硅电导率分别为13.489meV、970.54S/m。文章对同时施加两种激励的情况进行了详细研究,结果表明:同时施加两种激励的调制特性并非单独施加激励的数值叠加,电、光两种调制方式相互独立。在调制过程中,调制器出现的最大调制深度为99.74%。
[Abstract]:A dual-controlled terahertz supermaterial modulator is designed and its reflection characteristics at two frequencies in the terahertz band are studied. The modulator is composed of an open loop resonator and a "sandwich" structure at the bottom of the modulator. The "sandwich" structure is composed of graphene layer, polyimide layer and gold layer from top to bottom, in which the opening of the open resonator is filled with silicon. The structure can be modulated by electricity and light. That is to say, the graphene in the modulator is subjected to low voltage, and the weak light is applied to the silicon. The results show that there are two resonance reflection valleys in the reflection spectrum at the frequency of 0.806THzN 1.869 THz. Under the condition of satisfying the low excitation, the reflection intensity of the resonance reflection valley can be changed by enhancing the two kinds of excitation. The reflection modulation direction of the two resonance points shows the characteristics of first reverse and then same direction. The critical point corresponding to the graphene Fermi level and the silicon conductivity are 13.489meVN 970.54S / m respectively. The case of two kinds of excitation at the same time is studied in detail in this paper. The results show that the modulation characteristics of two kinds of excitation at the same time are not the numerical superposition of the single excitation, the two modulation modes of electricity and light are independent of each other, and in the process of modulation. The maximum modulation depth of the modulator is 99.74.
【作者单位】：山东科技大学电子通信与物理学院;
【基金】：国家自然科学基金项目(61001018) 山东省自然科学基金项目(ZR2016FM09) 山东省高等学校科技计划项目(J13LN16) 青岛市创新领军人才项目(13-CX-25) 中国工程物理研究院太赫兹科学技术基金项目(201401) 青岛经济技术开发区重点科技计划项目(2013-1-64) 山东科技大学研究生创新基金项目(YC150354)
【分类号】：TN761
【正文快照】： PACS:01.10.Hx,02.60.Cb,61.48.Gh,61.82.FkHigh speed modulators are very important components in electromagnetic fields because of their use-fulness in modulated lasers,construction of the on-chip interconnects in communication system[1-3],and datatransmis

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