增强型GaN功率器件栅驱动技术设计考虑

发布时间：2018-01-12 01:11

本文关键词：增强型GaN功率器件栅驱动技术设计考虑　出处：《电力电子技术》2017年08期 　论文类型：期刊论文

【摘要】：GaN晶体管相对于MOSFET器件有更小的导通电阻和栅电荷,在高速、高功率密度应用中独具优势。但增强型GaN器件存在自身独特的物理特性,包括最大栅压限制、阈值电压偏低和存在反向导通电压等。因此,栅驱动电路需要针对器件特性进行定制化设计。在此首先重点分析GaN器件在高速开关过程中存在的主要问题及解决方案,然后详细描述基于HHNEC 0.35μm CD工艺设计完成的一款80 V高压半桥GaN栅驱动电路,验证相关驱动技术的正确性。由仿真和测试结果可见,驱动信号具有良好的延迟特性和小的电压过冲,能够很好地满足相关应用需求。
[Abstract]:Compared to the GaN transistor MOSFET device has smaller turn-on resistance and gate charge, in high speed, the unique advantages of high power density applications. But the enhanced GaN device has its own unique physical characteristics, including the maximum gate voltage limit, low threshold voltage and reverse turn-on voltage. Therefore, the gate drive circuit the need for custom design according to the device characteristics. This first analyzes main problems existing in the process of high speed switching device GaN and the solution, and then a detailed description of the driving circuit to complete the HHNEC 0.35 m CD process design of a 80 V high voltage half bridge GaN grid based on verification of related driving technology. By the simulation and test results shows that the driving signal has good delay and small voltage overshoot, can well meet the application needs.

【作者单位】：电子科技大学;
【基金】：国家自然科学基金资助项目(61404020) 广东省自然科学基金资助项目(2014A030310407)~~
【分类号】：TN303
【正文快照】： l引言近年来Si基GaN晶体管己成为宽禁带半导体功率器件研宄热点,有望成为未来氋效率、高性能、低成本的电源系统解决方案m。与Si MOSFET相比,GaN器件在相同耐压下具有更小的导通电阻和栅极电荷,开关速度快、功率密度高,能够很好地适用于兆赫兹级大电流开关电源应用。但驱动GaN

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