SOI基3C-SiC薄膜的光谱表征

发布时间：2018-01-13 20:28

本文关键词：SOI基3C-SiC薄膜的光谱表征　出处：《光散射学报》2017年02期 　论文类型：期刊论文

更多相关文章： 立方碳化硅 SOI SiCOI 碳化 反向外延

【摘要】：本文探索在SOI基片上通过顶层Si直接与碳源反应,反向外延生长3C-SiC薄膜的工艺条件和技术。采用LPCVD技术,以CH4和H2混合气体为反应源,在SOI衬底上生长3C-SiC薄膜。采用X射线衍射分析仪、场发射扫描电子显微镜和傅里叶红外光谱来研究样品的结构和性质;并研究反应前、后样品电压-电容特性的变化。研究结果表明,通过反向外延的方法,能够在SOI基片反向外延生长得到3C-SiC薄膜,但目前的工艺条件有待进一步的改善。
[Abstract]:In this paper, the process conditions and techniques of 3C-SiC thin films grown on SOI substrates by direct reaction of top-layer Si with carbon source are investigated. LPCVD technique is used to grow 3C-SiC thin films by reverse epitaxy. 3C-SiC thin films were grown on SOI substrate using mixed gas of CH4 and H _ 2 as reaction source. X-ray diffraction analyzer was used. The structure and properties of the samples were studied by field emission scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FTIR). The changes of the voltage-capacitance characteristics of the samples before and after the reaction are studied. The results show that 3C-SiC films can be grown by reverse epitaxy on SOI substrates. However, the present technological conditions need to be further improved.
【作者单位】：四川大学物理科学与技术学院微电子技术重点实验室;
【基金】：四川大学青年教师科研启动基金(2010SCU11089)
【分类号】：TN304.055
【正文快照】： 1引言碳化硅(SiC)因具有宽带隙、高临界击穿电场、高热导率、高载流子饱和漂移速度等特点,在高温、高频、高压、高功率和抗辐射电子器件等方面具有重要应用,是极具潜力的宽禁带半导体材料[1]。在SiC的同素异构体中,立方碳化硅(3C-SiC)的稳定性最高,并因高热导率、高临界击穿电

【参考文献】