浸没式光刻中浸没流场的稳定性及密封性研究

发布时间：2018-01-14 00:31

本文关键词：浸没式光刻中浸没流场的稳定性及密封性研究　出处：《浙江大学》2017年硕士论文　论文类型：学位论文

【摘要】：集成电路(IC,Integrated Circuit)的发展要求单块芯片上集成越来越多的电子元器件,这就意味着刻蚀在芯片上的线宽需要不断缩小。当前浸没式光刻是线宽45纳米以下唯一获得大规模应用的光刻技术。浸没式光刻系统主要由物镜系统、流体供给回收系统、运动平台以及浸没单元等组成。其中浸没单元位于物镜和硅片之间,对于曝光过程中的硅片良品率起到了决定性的作用。浸没单元通过水平注液回收,垂直注液回收以及注气结构来保持浸没流场的稳定性和密封性。浸没流场的稳定性体现在流场的完整填充,流场核心区域的流速、压力、温度等参数的稳定以及流场无无气泡夹带和液体回流现象。浸没流场的密封性体现在步进扫描过程中流场边界的稳定、流场无液体泄漏以及流场牵拉出的液膜小于指标要求。基于浸没流场的稳定性及密封性要求,本论文对于浸没单元内部的各流场控制结构进行了优化设计并完成了以下工作:(1)对于影响浸没流场稳定性的水平注液回收结构、垂直注液结构进行了理论分析、仿真以及实验研究。优化了水平注液分流结构,通过理论计算得到了最小垂直注液孔径,通过实验得到了最佳垂直注液流量。(2)对于影响浸没流场密封性的垂直回收结构、注气结构进行了理论分析、仿真以及实验研究。运用接触线钉扎现象,推导出阶梯形的回收孔布置。基于流场动量平衡,得到了圆弧内凹的回收孔排布形式。基于垂直上升管中的两相流流型图,得到了最小注气流量。同时对于以上分析进行了仿真以及实验验证。(3)对浸没流场的整体性能测试,通过浸没单元的步进扫描实验,检测结构优化后的浸没单元性能,分析流场各指标:流速、压力、极限扫描速度等是否满足本课题要求。
[Abstract]:The development of IC integrated circuit requires more and more electronic components integrated on a single chip. This means that the linewidth etched on the chip needs to be reduced continuously. Currently, immersion lithography is the only lithography technology that can be used on a large scale below 45 nm. The immersion lithography system is mainly made up of objective lens system. Fluid supply recovery system, motion platform and immersion unit. The immersion unit is located between objective lens and silicon wafer. It plays a decisive role in the quality of silicon wafer during exposure. The immersion unit is recovered by horizontal injection. Vertical injection recovery and gas injection structure to maintain the stability and sealing of the immersed flow field. The stability of the submerged flow field is reflected in the complete filling of the flow field, the flow field core flow velocity, pressure. The stability of temperature and other parameters as well as the phenomenon of no bubble entrainment and liquid reflux in the flow field. The sealing of the submerged flow field is reflected in the stability of the flow field boundary during the step scanning. Flow field without liquid leakage and flow field pull out of the liquid film less than the index requirements, based on immersion flow field stability and sealing requirements. In this paper, the flow field control structure inside the immersion unit is optimized and the following work is completed: 1) the horizontal injection recovery structure which affects the stability of the submerged flow field is obtained. The vertical injection structure is analyzed, simulated and experimentally studied. The horizontal injection distribution structure is optimized, and the minimum vertical injection aperture is obtained by theoretical calculation. The optimal vertical liquid injection flow rate is obtained.) the vertical recovery structure, gas injection structure and contact wire pinning are theoretically analyzed, simulated and experimentally studied. Based on the momentum balance of the flow field, the layout of the recovery hole in the arc is obtained, and the two-phase flow pattern in the vertical riser is derived. At the same time, the simulation and experimental verification of the above analysis are carried out. The whole performance of the immersion flow field is tested, and the step scanning experiment of the immersion unit is carried out. The performance of immersion unit after structural optimization is tested, and the flow field parameters, such as velocity of flow, pressure and limit scanning speed, are analyzed whether or not they meet the requirements of this subject.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN405

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