适应于动态电压频率调整的抗辐照SRAM设计

发布时间：2018-01-14 19:23

本文关键词：适应于动态电压频率调整的抗辐照SRAM设计　出处：《微电子学与计算机》2017年04期 　论文类型：期刊论文

【摘要】：动态电压频率调整(Dynamic Voltage Frequency Scaling,DVFS)可以使系统在高电压工作时获得高性能,在低电压工作时降低系统功耗,它要求电路能够从正常电压一直到亚阈值区范围内均能正常工作.抗辐照DVFSSRAM的设计面临着低压工作稳定性及工艺、电压、温度偏差(Process,Voltage,Temperature,PVT)的严重影响.本文针对以上问题,设计了一款适应于DVFS应用的抗辐照静态随机存储器(Static Random Access Memory,SRAM).提出了新型抗辐照DICE单元结构,其读噪声容限相对于原有DICE单元有大幅提升.同时,针对常规分级位线结构时序控制电路存在的问题,提出了改进型复制列技术,增强了SRAM存储体在不同PVT环境下工作的稳定性.对SRAM存储体进行了电路设计及版图设计,后仿真结果表明,设计的512bit SRAM存储体可在0.6V~1.8V电源电压下正常工作.在1.8V下,SRAM的存取速度为5.1ns,功耗为1.8mW;在0.6V电压下,SRAM的存取速度为93.5ns,功耗为14.63μW,比1.8 V电源工作时的功耗降低了约100倍.另外,设计的SRAM对宽度为300ps以下的单粒子瞬态脉冲具有滤除能力,对单粒子翻转效应有良好的抵抗能力.
[Abstract]:Dynamic Voltage Frequency scaling can enable the system to achieve high performance when operating at high voltage. The power consumption of the system is reduced when working at low voltage. It requires that the circuit can work normally from the normal voltage to the sub-threshold region. The design of the anti-irradiation DVFSSRAM is faced with the low voltage operation stability and process voltage. This paper aims at the above problems. A static Random Access Memory is designed for DVFS applications. A novel irradiation-resistant DICE cell structure is proposed, the read noise tolerance of which is greatly improved compared with the original DICE unit. At the same time. In order to solve the problems existing in the sequential control circuit of the conventional hierarchical bit line structure, an improved replica sequence technique is proposed. The stability of SRAM storage under different PVT environment is enhanced. The circuit design and layout design of SRAM storage are carried out, and the simulation results show that. The designed 512bit SRAM memory can work normally at the voltage of 0.6V / 1.8V, and the access speed is 5.1nsand the power consumption is 1.8mW at 1.8V; At 0.6 V voltage, the access speed of SRAM is 93.5nsand the power consumption is 14.63 渭 W, which is about 100 times lower than the power consumption of 1.8 V power supply. The designed SRAM has the ability to filter the single particle transient pulse with width less than 300ps and has good resistance to the single particle flip effect.
【作者单位】：西安交通大学微电子学院;
【基金】：国家自然科学基金(61271089) 陕西省重点创新团队项目(2013KCT-03)
【分类号】：TP333;TN402
【正文快照】： 1引言当集成电路工作在辐射环境中时,会受到质子、中子及α粒子等高能粒子的辐射干扰.随着电路敏感节点存储电荷数量的减少和电路单元排列密度的增加,单粒子效应对电路的影响越来越严重.在单粒子效应的“软错误”中,单粒子翻转效应(Single E-vent Upset,SEU)和单粒子瞬态(Sing

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