新型高性能超宽带低噪声放大器设计

发布时间：2018-01-14 19:23

本文关键词：新型高性能超宽带低噪声放大器设计　出处：《中国电子科学研究院学报》2017年01期 　论文类型：期刊论文

【摘要】：基于0.18μm CMOS工艺,设计了一款工作于4.2~11.9 GHz的低噪声超宽带低噪声放大器(LNA)。该LNA采用一种增强π型匹配输入网络实现超宽带输入阻抗匹配以及平坦的高增益。为了取得较低且平坦的噪声系数,将二阶噪声系数频率响应的极点频率和极点品质因数优化到最大平坦状态。流片实现的芯片测试结果表明:该LNA消耗了10.1 mW的功耗,在低于13.3 GHz的频率下S11均低于-10 dB,在频率2~12.2 GHz间,取得了12.6±1.5 dB的高增益,表明该LNA的3 dB带宽为10.2 GHz。而且,该LNA在8 GHz下取得了2.4 dB的最小噪声系数,在4.2~11.9 GHz频率间,噪声系数为2.6±0.2 dB。在8 GHz频率下,测试得到的输入三阶交调截止点IIP3为-0.5 dBm。
[Abstract]:Based on 0.18 渭 m CMOS process. A low noise ultra-wideband low noise amplifier (LNA) working at 4.2G 11.9 GHz is designed. The LNA uses an enhanced 蟺 type matching input network to achieve ultra-wideband input impedance matching and flat high gain. The pole frequency and the pole quality factor of the second order noise coefficient frequency response are optimized to the maximum flat state. The chip test results show that the LNA consumes 10. 1 MW power. When the frequency is lower than 13.3 GHz, the S11 is lower than -10 dB, and the high gain of 12.6 卤1.5 dB is obtained in the frequency range of 2t 12.2 GHz. The results show that the 3 dB bandwidth of the LNA is 10. 2 GHz. Moreover, the minimum noise coefficient of the LNA is 2. 4 dB at 8 GHz. The noise coefficient was 2. 6 卤0. 2 dB at the frequency of 4. 2 卤11. 9 GHz. The noise coefficient was 8 GHz. The input third-order crossover cut-off point IIP3 is -0.5 dBm.
【作者单位】：长江大学文理学院;
【分类号】：TN722.3
【正文快照】： 增益,但是噪声系数性能较差,高达5.5 dB;文献0引言 [3]所报道的基于65 run CMOS设计完成的LNA,增益为13 dB,噪声系数取得了2.1?3.5 dB的良好性近年来,性能优良的超宽带CMOS低噪声放大能,但是由于电路中的有源器件过多,导致了功耗过器(LNA)在文献中多有报道[|]。例如,文献[2]

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