载能离子束辐照碳化硅及无序晶体的导波光学性质

发布时间：2018-01-14 23:25

本文关键词：载能离子束辐照碳化硅及无序晶体的导波光学性质　出处：《山东大学》2015年硕士论文　论文类型：学位论文

【摘要】：集成光学是在20世纪的微电子学,以及后来的光电子学基础上发展起来的一门新兴学科,它采用集成的方法,来研究和发展光电子以及复合光电子学器件。众所周知,传统的光学系统不仅体积庞大、稳定性差,同时还具有光束的准直调节困难等特点,无法适应现代光电技术的发展,在1969年,贝尔实验室的S.E.Miller博士提出了集成光学的概念,这一概念发展了光学以及微电子学的原有技术上的优势,它将之前传统的由分立元器件组成的光电子学系统改良为集成光学系统,主要研究将激光器、调制器等有源器件集成在同一衬底材料上,并用光波导、耦合器等器件将其连接起来组成微型光学系统,这样可以有效得到光学系统的小型化、集成化和薄膜化。其中光波导结构是集成光学的基础部分,它是由折射率较低的区域包裹折射率较高区域组成的,依赖于光束的全反射原理来限制光波的传输,利用己报道的多种不同的波导制备方法,可以制作出具有不同结构的光波导,如平面光波导、通道光波导等。对实际应用来说,制备结构完美且灵活的光波导是十分必要的,晶体材料的种类繁多,结构复杂,制备晶体波导的方法也各有特点。到目前为止,人们已经利用多种技术在晶体材料上制备光波导结构,载能离子束辐照技术在光学材料上制备平面光波导。载能离子束辐照技术是一种“物理”的光波导制备方法,不依赖于材料本身的化学属性。它利用一定能量的带电离子注入到晶体材料的表面,离子在进入材料以后与靶材料原子核或电子之间发生相互碰撞而失去能量,引起靶材料晶格结构损伤,并进一步使其折射率发生改变,从而形成光波导结构。通常的轻离子注入,一般采用H或He离子,而快重离子辐照技术是采用所谓的重离子,(比如C、N、O离子等),能量大于1MeV/amu。该方法最显著的优点是材料适用性较为广泛,再结合激光刻蚀技术或精密金刚石刀切割技术,可以较好的制备二维通道光波导结构。本论文是利用载能离子束辐照技术在4H-SiC晶体与无序晶体上制备平面光波导结构,而后采用飞秒激光刻蚀或精密金刚石刀切割技术进一步微加工成二维脊型光波导,研究波导结构的导波特性,其中包括波导的折射率分布、传输模式、传输损耗、微拉曼光谱与微荧光等性质,根据制备材料的不同将本论文研究工作及结果归纳如下：利用快重离子辐照技术在4H-SiC晶体上制备平面光波导结构,接下来采用飞秒激光刻蚀在平面波导上刻蚀出四条不同参数下的脊型光波导结构。通过实验测量发现,脊型光波导结构在632.8nm下能较好的限制光波的传输,且光波导最大的透射波长在900nm左右,同时利用单次扫描技术获得的脊型光波导拥有最低的传输损耗值,为5.1dB/cm。通过实验获得的拉曼光谱图表明,相比于衬底区,波导区晶体材料的拉曼峰发生了一定的红移。利用快重离子辐照技术结合精密金刚石刀切割技术在Nd:CNGG晶体上制备脊型光波导结构,通过实验测量发现,脊型光波导结构在632.8nm下的传输损耗值低至3.8dB/cm,其微拉曼光谱图和荧光图均显示碳离子辐照没有引起波导区晶格结构的改变,同时研究波导的热稳定性发现,波导的晶格结构在260℃以下温度都是相对稳定的。利用离子注入技术在Nd:BaLaGa3O7和Nd:SrLaGa3O7晶体上制备平面光波导结构,接下来采用精密金刚石刀切割在平面波导上刻蚀出脊型光波导。通过实验发现波导结构在可见光与近红外波段均能较好的限制光波传输,并且在1550nm下可以实现波导结构的单模传输。在632.8nm下,Nd:BaLaGa3O7和Nd:SrLaGa3O7两种晶体的传输损耗最低值分别为1.6dB/cm和2.5dB/cm。波导区的拉曼光谱图显示,碳离子注入不会改变无序晶体的晶格结构。
[Abstract]:In twentieth Century the integrated optics is a new subject in microelectronics, optoelectronics and later development of the foundation, it uses the integrated method to the research and development of optoelectronic and composite optoelectronics devices. As everyone knows, the traditional optical system not only large volume, poor stability, but also has the characteristics of difficult adjusting collimation beam, unable to adapt to the the development of modern photoelectric technology in 1969, Dr. S.E.Miller Baer laboratory proposed the concept of integrated optics, the concept of the development of the original optics and microelectronics technology on the advantages, it will traditional is composed of discrete components of the system for the improvement of Optoelectronics integrated optical system, mainly studies the active devices such as integrated laser modulator on the same substrate material, and optical waveguide coupler will connect the micro optical system The system, which can effectively get the miniaturization of the optical system, the integration and the films. The optical waveguide structure is a fundamental part of integrated optics, which is composed of a refractive index region coated low refractive index region consisting of high transmission, the principle of total reflection depends on the beam to limit light, waveguide fabrication methods the reported use of different, you can create a different optical waveguide structure, such as planar optical waveguides, channel waveguide. In practical application, preparation of optical waveguide structure, perfect and flexible is very necessary, many types of crystal materials, complex structure, preparation method of crystal waveguides also have features. So far, people have been using a variety of preparation technology of optical waveguide structure in the crystal material, energetic ion beam irradiation preparation of planar optical waveguides in optical materials. Energy ion beam irradiation technology is a kind of" Optical waveguide preparation method of physical, chemical properties do not depend on the material itself. It uses the energy of charged ions into the surface of crystal materials, and target material ions between nuclei or electrons in the material into the collide and lose energy caused by the lattice structure of target material damage, and to further its refraction the rate of change, thus forming a waveguide structure. The light ion implantation usually, generally use the H or He ions, and fast heavy ion irradiation technology is the use of so-called heavy ions, (such as C, N, O ions), the advantages of energy greater than 1MeV/amu. this method is the most significant materials widely applicability, and combined with laser etching technology or precision diamond cutting technology, can better prepare two-dimensional channel waveguide structure. This paper is the use of energetic ion beam irradiation preparation plane in 4H-SiC crystal and disordered crystal body Optical waveguide structure, and then by using femtosecond laser etching or precision diamond knife cutting technology further micro machining into two-dimensional ridge waveguides, guided wave characteristics of waveguide structure, including waveguide refractive index distribution, transmission mode, transmission loss, micro Raman spectroscopy and micro fluorescence properties, according to the preparation of different materials will be the research works and results are summarized as follows: the use of fast heavy ion irradiation technology fabricated on 4H-SiC crystal planar waveguide structure, then by using femtosecond laser etching etched ridge waveguide structure four under different parameters on planar waveguide. Through experimental measurement shows that the ridge waveguide structure can limit light transmission good at 632.8nm, and the maximum optical waveguide transmission wavelength at about 900nm, while using a single scan technique of ridge waveguide has the lowest transmission loss value is 5.1dB/c Raman spectra of M. obtained from experiments show that compared to the substrate, the occurrence of certain redshift Raman waveguide region crystal materials. By fast heavy ion irradiation combined with precision diamond cutting technology on Nd:CNGG crystal preparation of ridge waveguide structure, through experimental measurement shows that the transmission loss of ridge waveguide structure under the 632.8nm value as low as 3.8dB/cm, the micro Raman spectra and fluorescence map showed that carbon ion irradiation did not cause the change of the lattice structure of waveguide, thermal stability and study of waveguide, the waveguide lattice structure is relatively stable at 260 degrees centigrade. The injection preparation technology of planar optical waveguide structures in Nd:BaLaGa3O7 and Nd:SrLaGa3O7 crystal by ion, followed by diamond knife etched ridge waveguides on planar waveguide. Through the experiment of waveguide structure in visible light and The near infrared band can limit light transmission effectively, and can realize single-mode waveguide structure in 1550nm. In 632.8nm, Nd:BaLaGa3O7 and Nd:SrLaGa3O7 two crystal transmission loss values were the lowest Raman spectra of 1.6dB/cm and 2.5dB/cm. waveguide region that does not change the crystal lattice structure of disordered carbon ion implantation.

【学位授予单位】：山东大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN252

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