Si衬底表面圆柱形抗反射周期微结构的设计及制作

发布时间：2018-01-15 00:17

本文关键词：Si衬底表面圆柱形抗反射周期微结构的设计及制作　出处：《红外与激光工程》2016年06期 　论文类型：期刊论文

【摘要】：应用严格耦合波分析方法(RCWA),在本征硅片衬底表面设计并制作了一种圆柱形抗反射微结构元件。通过MATLAB软件模拟仿真确定其最优参数组合,使反射率设计值为3%。应用二元曝光技术和反应离子刻蚀技术制作了单面和双面的圆柱形微结构,根据结果得到射频功率、气体流量及工作气压对微结构侧壁陡直度及形貌具有很大影响。还分析比较了形状(t为实际柱顶面直径与底面直径之比)与反射率的关系。采用热场发射扫描电子显微镜对该结构进行形貌表征,综合显微成像红外光谱仪对反射率进行测量。实验结果:制作了单面、双面微结构与无结构本征硅片反射率做比较双面圆柱形微结构的抗反射效果最好,反射率达8%左右,基本达到抗反射设计要求。
[Abstract]:The strictly coupled wave analysis method is used. A cylindrical anti-reflection microstructural element was designed and fabricated on the substrate surface of intrinsic silicon wafer. The optimal parameter combination was determined by MATLAB software simulation. The reflectivity design value is 3. Using binary exposure technique and reactive ion etching technique, the cylindrical microstructures with one and two sides are fabricated, and the RF power is obtained according to the results. The gas flow rate and working pressure have great influence on the steepness and morphology of the microstructural side wall, and the ratio of the diameter of the actual cylinder top to the bottom surface is also analyzed and compared. The morphology of the structure was characterized by thermal field emission scanning electron microscope. The reflectivity was measured by integrated microimaging infrared spectrometer. The experimental results showed that the reflectivity of double-sided cylindrical microstructures was the best compared with that of unstructured intrinsic silicon wafers. The reflectivity is about 8%, which basically meets the requirements of anti-reflection design.
【作者单位】：长春理工大学光电工程学院;华中光电技术研究所-武汉光电国家实验室;
【基金】：国家自然科学基金(61108044) 吉林省自然科研基金(20150101038JC)
【分类号】：TN305.7;O435.1
【正文快照】： 0引言近年来,随着微纳光学技术飞速发展,亚波长微结构逐步走进人们视野。此种微结构可通过激光直写、干法刻蚀等方法加工而成,此结构不受材料限制,环境适应性完全取决于衬底材料本身,可以有效克服薄膜材料热膨胀不稳定,粘附性差等问题。而研究理论采用矢量衍射理论作为支撑,因

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