辐照对远红外和紫外波段光学材料的影响

发布时间：2018-01-18 06:05

本文关键词：辐照对远红外和紫外波段光学材料的影响　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：单晶Si是一种重要的半导体器件材料,在器件研发方面极具潜力。本文通过离子注入的方法分别对单晶Si进行He离子和N离子掺杂,通过Co60γ射线辐射源辐照单晶Si,利用磁控溅射法在Si表面镀不同厚度的Ag膜,研究处理样品表面的形貌和光学性质变化。本论文的实验结果可为研究高注量掺杂Si后样品的光学性质及其物理机制提供数据。主要的结论如下:(1)研究了He离子掺杂对单晶Si的影响。研究发现,在整个测试温区内(145K至520K),随着掺He浓度增加,样品的吸收系数逐渐增大,折射率逐渐减小。所有样品的吸收系数和折射率随温度的变化趋势是一致的。其中折射率在整个测试波段内随温度的升高而增大。但吸收系数在不同波段呈现不同趋势,当波数小于12cm-1时,吸收系数随温度的升高而减小;波数大于30cm-1时,吸收系数随着温度的升高而增大,运用Drude模型对两组曲线进行了模拟计算,模拟曲线与实验曲线吻合较好。原子力显微镜分析表明随着注量的增加,样品表面粗糙度增大,当注量达到2.0×1017cm-2时,表面有明显的隆起。光学显微镜结果表明当注量达到4.0×1017cm-2时表面有剥落现象产生。随着注量增加,样品的吸收增强,发光强度增大,He泡数明显增多,并且在注量为1×1017cm-2时,出现新的发光峰,分别位于360nm、407nm、537nm、600nm处。(2)研究了不同膜厚的Ag膜对单晶Si的影响。研究发现,随着膜厚的增加,样品表面粗糙度增加,颗粒增大,吸收系数增大。(3)研究了N离子掺杂对单晶Si和SiO2/Si的影响。研究发现,随着注量的增加,Si样品的透射率、吸收系数、折射率和介电常数没有明显的变化,表面粗糙度增大,SiO2/Si样品的透射率没有明显的变化,表面粗糙度先减小后增加。(4)研究了不同剂量的γ射线对单晶Si和SiO2/Si的影响。研究发现,随着剂量的增加,Si样品表面损伤越来越严重,吸收增强,发光强度增大,但并未出现新的发光峰,SiO2/Si样品表面损伤越来越严重,折射率变化不大,但平均膜厚却变小了。
[Abstract]:Single crystal Si is an important semiconductor device material, which has great potential in the research and development of semiconductor devices. In this paper, single crystal Si is doped with he and N ions by ion implantation. Single crystal Si was irradiated by Co60 纬 -ray radiation source, and Ag films of different thickness were deposited on Si surface by magnetron sputtering. The experimental results of this paper can provide data for the study of the optical properties and physical mechanism of the samples doped with Si with high Fluence. The main conclusions are as follows: 1). The effect of he doping on single crystal Si was investigated. In the whole temperature range of 145K to 520K, the absorption coefficient of the samples increases with the increase of He-doped concentration. The absorption coefficient and refractive index of all samples are consistent with the change of temperature. The refractive index increases with the increase of temperature in the whole testing band, but the absorption coefficient does not appear in different bands. Same trend. When the wave number is less than 12cm-1, the absorption coefficient decreases with the increase of temperature. When the wave number is more than 30 cm ~ (-1), the absorption coefficient increases with the increase of temperature. The Drude model is used to simulate the two sets of curves. The atomic force microscope analysis shows that the surface roughness of the sample increases with the increase of flux, and when the flux reaches 2.0 脳 1017cm-2, the simulated curve is in good agreement with the experimental curve. The optical microscope results show that the surface spalling occurs when the flux reaches 4.0 脳 1017cm-2. With the increase of the flux, the absorption of the sample increases and the luminescence intensity increases. The number of he bubbles increased obviously, and at the flux of 1 脳 1017 cm ~ (-2), a new luminescence peak was observed, which was located at 360 nm ~ (17) nm ~ (407) nm, respectively. The influence of Ag films with different thickness on single crystal Si was studied. It was found that the surface roughness and particle size increased with the increase of film thickness. The influence of N ion doping on Si and SiO2/Si was investigated. It was found that the transmittance and absorption coefficient of Si samples increased with the increase of the flux. There is no obvious change in refractive index and dielectric constant, and there is no obvious change in the transmittance of SiO2 / Si sample with increasing surface roughness. The effects of different doses of 纬-ray on single crystal Si and SiO2/Si were studied. It was found that the surface damage of Si samples was more and more serious with the increase of dose. The absorption increases and the luminescence intensity increases, but there is no new peak, the surface damage of Sio _ 2 / Si sample becomes more and more serious, the refractive index changes little, but the average film thickness becomes smaller.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.3

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