生长在不同工艺条件下的氮化镓外延层的发光诊断探究

发布时间：2018-01-21 18:35

本文关键词： 氮化镓金属有机气相沉积法位错阴极射线发光光致发光　出处：《吉林大学》2015年硕士论文　论文类型：学位论文

【摘要】：半导体材料已经广泛应用于我们的生产生活中，发挥了重要的作用。这是一种导电性能介于导体与绝缘体的材料。在电视机，，收音机以及很多测温装置中都能找到半导体材料的身影。由于他导电性可受控制，从科技和经济发展的角度上看，半导体材料具有非常巨大的重要性，如今在21世纪，我们身边的半导体材料已经所处可见，例如计算机，手机等电子设备，汽车防撞雷达等汽车光电子市场领域，光电通信领域，军工领域，LED半导体照明领域等等。常见的半导体材料有硅、锗、砷化镓等。第三主族的元素作为一种非常有前景的光学材料被广泛的应用于光电设备的研发当中。目前已经制造出从紫外到红外波段工作的多种光电二极管、激光二极管、全色光电二极管显示器等等。而其中氮化镓作为其中一种具有较大禁带宽度的半导体，引起了人们的注意并着重于对其研究，目前氮化镓作为一种优良的光学材料成为具有重要应用价值的半导体。我们的研究材料为生长c面蓝宝石衬底的不同位错密度的氮化镓薄膜,主要是改变位错密度，研究位错密度对于材料发光的影响。本文主要针对氮化镓外延层采用光致发光和阴极射线发光两种研究方法，研究位错密度对氮化镓层激子强度的影响。氮化镓层通过金属有机气相沉积生长在c面的蓝宝石衬底上。我们的研究是通过脉冲发光光谱来说明的。预期结论:位错密度会对材料的发光强度产生影响。我们根据实验结果分析，改变位错密度能使材料能够具有更大的发光效率，并得出能够更好的对氮化镓外延层位错进行控制的经济快速的方法，以便于我们更好的制作出优良的半导体器件以及光电子设备。
[Abstract]:Semiconductor materials have been widely used in our production and life, playing an important role. This is a kind of conductive materials between conductors and insulators. Semiconductor materials can be found on radios and many thermometers. Because their conductivity is controlled, semiconductor materials are of great importance in terms of technology and economic development. Now in 21th century, the semiconductor materials around us are already visible, such as computers, mobile phones and other electronic devices, automotive photoelectron market area such as automotive anti-collision radar, optoelectronic communication field, military field. LED semiconductor lighting field and so on. Common semiconductor materials are silicon, germanium, gallium arsenide and so on. As a promising optical material, the elements of the third host group have been widely used in the research and development of optoelectronic devices. At present, many photodiodes have been fabricated which work from ultraviolet to infrared bands. Laser diodes, panchromatic photodiode displays and so on. Among them, gallium nitride, as one of the semiconductor with large bandgap, has attracted people's attention and focused on its research. At present, gallium nitride as an excellent optical material has become a semiconductor with important application value. Gallium nitride films with different dislocation densities are grown on c-plane sapphire substrates. The main material is to change the dislocation density. The influence of dislocation density on the luminescence of materials was studied. In this paper, two methods of photoluminescence and cathodoluminescence were used to study the epitaxial layer of gallium nitride. The effect of dislocation density on exciton intensity of gallium nitride layer is studied. Ga _ 3N layer is grown on c-plane sapphire substrate by metal-organic vapor deposition. Our study is explained by pulse luminescence spectroscopy. Expected conclusion: dislocation density will have an impact on the luminescence intensity of the material. According to the experimental results, we found that changing dislocation density can make the material have greater luminescence efficiency. The economical and fast method of controlling the dislocation of epitaxial layer of gallium nitride is obtained, so that we can make better semiconductor devices and optoelectronic devices.
【学位授予单位】：吉林大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304

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