应用于SAW器件的多层膜的生长及特性研究

发布时间：2018-01-22 01:53

本文关键词： 碳源浓度生长温度晶体取向压电薄膜　出处：《河北工业大学》2015年硕士论文　论文类型：学位论文

【摘要】：本文主要研究热丝化学气相淀积(HFCVD)的实验操作以及其工艺参数对金刚石薄膜生长的影响。在此基础上,采用磁控溅射法进行ZnO薄膜的生长并分析实验参数的影响。整体分析ZnO/Diamond/Si多层膜的表面形貌、取向以及电学性能,讨论了其作为SAW器件基础薄膜的可能性。得到结论如下:1、碳源浓度和生长温度是影响金刚石薄膜生长的最主要因素。在碳源浓度逐渐增大的时,沉积速率也随着增大,但当碳源浓度过大时,金刚石薄膜表现在sp3含量上的品质却越来越差,膜层中石墨的含量显著增大;生长温度较低时,形核小且慢,薄膜生长较慢,生长温度过高会使得形核过快造成薄膜生长的不均匀,甚至出现硅基体表面的熔融现象。2、碳源浓度影响金刚石薄膜生长的取向:低碳源浓度时,热力学作用明显,(111)面比(100)面生长速率高;高碳源浓度时,动力学作用明显,(100)面比(111)面生长速率高。3、磁控溅射法生长ZnO薄膜的影响因素主要有以下几个:衬底温度主要影响ZnO薄膜生长的c轴取向与表面粗糙度;溅射功率主要影响ZnO薄膜生长的取向与生长速率;溅射压强和氩氧比主要是通过影响溅射粒子的数目和自由程等对薄膜的生长厚度产生影响。4、最终制备获得了质量较好的ZnO/Diamond/Si多层膜。金刚石膜的厚度和粗糙度能够满足声表面波传输的性能要求。经霍尔测试,ZnO层电阻率接近109?,其压电性能满足声表面波器件的性能要求。
[Abstract]:In this paper, the experimental operation of hot filament chemical vapor deposition (HFCVD) and the influence of its technological parameters on the growth of diamond films are studied. The ZnO films were grown by magnetron sputtering and the influence of experimental parameters was analyzed. The surface morphology, orientation and electrical properties of ZnO/Diamond/Si multilayers were analyzed. It is concluded that the concentration of carbon source and the growth temperature are the most important factors affecting the growth of diamond films. When the concentration of carbon source increases gradually. The deposition rate also increases, but when the concentration of carbon source is too high, the quality of diamond film on the content of sp3 becomes worse and worse, and the content of graphite in the film increases significantly. When the growth temperature is low, the nucleation is small and slow, the film growth is slow, the growth temperature is too high, the growth of the film will be uneven, and even the melting phenomenon of silicon substrate surface will occur. 2. The orientation of diamond films was influenced by the concentration of carbon source. When the concentration of carbon source was low, the growth rate of diamond films was higher than that of 100). When the concentration of carbon source is high, the growth rate of Kinetic effect is obviously higher than that of C111) surface. The main factors affecting the growth of ZnO thin films by magnetron sputtering are as follows: substrate temperature mainly affects the c-axis orientation and surface roughness of ZnO films; Sputtering power mainly affects the orientation and growth rate of ZnO films. The sputtering pressure and the ratio of argon to oxygen mainly affect the thickness of the films by influencing the number and free path of the sputtering particles. Finally, ZnO/Diamond/Si multilayer films with good quality were prepared. The thickness and roughness of diamond films can meet the performance requirements of saw transmission. The resistivity of ZnO layer is close to 109? Its piezoelectric properties meet the performance requirements of saw devices.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN65

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