一种超低功耗的低电压全金属氧化物半导体基准电压源

发布时间：2018-01-22 05:23

  本文关键词： 基准电压源 超低功耗 低电压 全金属氧化物半导体 亚阈值　出处：《西安交通大学学报》2017年08期 　论文类型：期刊论文

【摘要】：针对传统带隙基准电源电压高、功耗高和面积大的问题,提出了一种超低功耗的低电压全金属氧化物半导体(MOS)基准电压源。该基准源通过电压钳制使MOS管工作在深亚阈值区,利用亚阈值区MOS管的阈值电压差补偿热电势的温度特性,同时采用负反馈提高了电压源的线性度与电源抑制比。整个电压源电路采用SMIC 0.18μm互补金属氧化物半导体工艺设计,仿真结果表明:基准电压源的电源电压范围可达0.5~3.3V,线性调整率为0.428%V-1,功耗最低仅为0.41nW;在1.8V电源电压、-40~125℃温度范围内,温度系数为4.53×10-6℃-1,输出电压为230mV;1kHz下电源抑制比为-60dB,芯片版图面积为625μm2。该基准电压源可满足植入式医疗、可穿戴设备和物联网等系统对芯片的低压低功耗要求。
[Abstract]:Aiming at the problems of high voltage, high power consumption and large area of traditional bandgap reference power supply. An ultra-low power low voltage all metal oxide semiconductor (MOS) voltage reference source is proposed, which enables the MOS tube to work in the deep subthreshold region through voltage clamping. The temperature characteristics of the thermoelectric potential are compensated by the threshold voltage difference of the MOS tube in the sub-threshold region. At the same time, the linearity of the voltage source and the power supply rejection ratio are improved by negative feedback. The whole voltage source circuit is designed by SMIC 0.18 渭 m complementary metal oxide semiconductor process. The simulation results show that the voltage range of the reference voltage source is up to 0.5V / 3.3V, the linear adjustment rate is 0.428kW / 1, and the minimum power consumption is 0.41nW; The temperature coefficient is 4.53 脳 10 ~ (-6) 鈩，

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