光泵浦外腔面发射激光器热管理的研究

发布时间：2018-01-22 06:05

  本文关键词： 光泵浦垂直外腔面发射激光器 热管理模拟 基质酸性腐蚀　出处：《重庆师范大学》2015年硕士论文　论文类型：学位论文

【摘要】：光泵浦垂直外腔面发射激光器(optically pumped vertical external cavity surface emitting laser,OP-VECSEL)可以输出TEM00模的光,它综合了面发射半导体激光器和光泵浦固体激光器的优点,高功率,高光束质量,能方便地进行锁模和腔内倍频,被广泛地用于激光显示领域,医学刑侦技术和生物仪器领域的一种新型的激光光源。本文首先介绍了半导体激光器的发展过程,与气体激光器和固体激光器均做了一定的比较,突出了半导体激光器可以直接由电流泵浦或光泵浦。介绍了由半导体激光器和光泵浦固体激光器发展而来的光泵浦垂直外腔面发射激光器。介绍了光泵浦垂直外腔面发射激光器的优势:光泵浦垂直外腔面发射激光器无pn结、无电接触,简化了激光器芯片的生长过程,也不需要诸如光刻和台面蚀刻额外的处理,可以灵活的调节腔长,光泵浦垂直外腔面发射激光器的输出光可以覆盖红外到可见光波段。带隙工程允许优化垂直外腔面发射激光器泵浦的功率分布,以消除对多量子载流子传输的限制和优化的屏障,可最大限度提高泵浦吸收效率和限制量子阱的载流子,从而最大限度地减少了由于光泵浦产生的不必要的热量。介绍了垂直外腔面发射激光器在多个领域的广泛应用。但同时也说明了了垂直外腔面发射激光器外延片在生长过程中由于设备等原因导致的不均匀性,会改变半导体微腔的长度,当有源区中的温度上升时,输出的激光波长会红移。多数应用要求具有波长稳定性和线宽要求,这些缺点可能会限制了光泵浦垂直外腔面发射激光器在这些方面的应用。介绍了光泵浦垂直外腔面发射激光器外延片的基本理论和结构,给出了外延片结构中运行原理能带带隙示意图,形象地说明了激光的形成机制。阐述了外延片中分布布拉格反射镜的设计原理和公式推导,讨论了反射率和周期膜层数奇偶数的关系,得出奇数层膜数的反射率要比偶数层膜数要大。介绍了多量子阱有源区中因晶格不匹配的应力而导致缺陷和错位的量子阱应变理论,并对临界厚度做了计算和量子阱的自发辐射谱做了分析。给出了光在周期性增益结构的光场分布。根据实验数据画出了阈值载流子功率,阈值泵浦功率和量子阱个数的关系。对分布布拉格反射镜上光斑的尺寸,外腔镜上的光斑和腔长的关系给出了关系曲线图。介绍了光泵浦垂直外腔面发射激光器热管理的基本思想和建立了光泵浦垂直外腔面发射激光器中底部散热器和窗口散热片的热量模型并进行了分析,通过了MATLAB软件模拟对是否有衬底基质,是否有散热片,在不同的泵浦光斑直径,不同功率下分别进行了模拟,并给出了相应的结论。介绍了光泵浦垂直外腔面发射激光器热管理的常用方法,包括散热窗口片的使用,外延片基质的去除。给出了外延片的结构和成份表,这样更能有针对性的去除基质,其中外延片基质的去除包括机械减薄法来去除大部分基质然后再用化学腐蚀法去除剩下的基质,或者直接使用化学腐蚀法去除。使用的化学湿法腐蚀单独做了比较性的实验,通过不同配比的硫酸和双氧水腐蚀液,在不同的温度对外延片基质的腐蚀速率和腐蚀后的表面平整度给了比较和分析,并使用原子力显微镜来表征腐蚀后表面的平整度,结合实际情况来判断较好的腐蚀条件。
[Abstract]:Optically pumped vertical external cavity surface emitting laser (optically pumped vertical external cavity surface emitting laser, OP-VECSEL) TEM00 model can output light, it combines the advantages, surface emitting semiconductor lasers and optical pumped solid laser of high power, high beam quality, convenient for locking and intracavity frequency doubling, is widely used in laser the display area, a new type of laser light field medical criminal investigation technology and biological instrument. This paper first introduces the development process of the semiconductor laser, and gas and solid-state lasers have done some comparison, the semiconductor laser can be directly pumped by the current outstanding or optical pumping is introduced. Optically pumped vertical external cavity surface of a semiconductor laser and light pumped solid laser and the emitting laser. The optically pumped vertical external cavity surface emitting laser light advantage. Pumped vertical external cavity surface emitting laser without PN node, no electric contact, simplifies the growth process of the laser chip, and does not require additional processing such as photolithography and mesa etching, the flexibility to adjust the cavity length, the output light pumped vertical external cavity surface emitting laser light can cover the infrared to visible light band. Power distribution allow gap engineering optimization of vertical cavity surface emitting laser pumped, to eliminate the multiple quantum carrier transmission constraints and optimization of the barrier, to maximize the carrier pump absorption efficiency and limit the quantum well, thereby minimizing the unnecessary heat generated by optical pumping. The application of vertical external cavity surface emitting lasers in many fields. But at the same time also shows that the inhomogeneity of the vertical cavity surface emitting laser wafer due to equipment and other reasons in the process of growth, will The change of semiconductor micro cavity length, when the active region temperature rises, the output of the laser wavelength shifts to red. Most application requirements have wavelength stability and linewidth, these disadvantages may limit the optically pumped vertical external cavity surface emitting laser application in these fields. This paper introduces the optically pumped vertical external cavity surface emitting basic the theory and structure of the laser epitaxial wafer, wafer structure is given in the operating principle of the energy band diagram, vividly illustrates the formation mechanism of the laser. It also expounds the design principle and formula derivation of distributed Prague reflector in the epitaxial wafer, discussed the relationship between the reflectivity and the number of cycles of odd and even the odd film reflectivity the number of results than even number to film. This paper introduces a multi quantum well active region due to stress caused by the lattice mismatch strain quantum well theory defects and dislocation, and the critical thickness 鍋氫簡璁＄畻鍜岄噺瀛愰槺鐨勮嚜鍙戣緪灏勮氨鍋氫簡鍒嗘瀽.缁欏嚭浜嗗厜鍦ㄥ懆鏈熸，

本文编号：1453897