压接式IGBT器件封装结构对并联芯片开通电流的影响与抑制

发布时间：2018-01-23 02:06

本文关键词： 压接式IGBT 寄生电感瞬态电流分布　出处：《电网技术》2017年03期 　论文类型：期刊论文

【摘要】：对于压接式IGBT器件,封装结构引起的寄生参数不一致将导致开通瞬态过程中并联IGBT芯片的电流分布不一致,使部分芯片在开关瞬态过程中的电流过冲太大,从而降低了开通性能。采用寄生参数提取、电路建模仿真以及实验验证的方法,首先在压接式IGBT器件各并联芯片驱动回路参数一致的条件下,研究了发射极凸台布局对并联芯片开通电流一致性的影响。其次,在发射极凸台布局完全对称的情况下,研究了栅极PCB板不对称布局对各并联芯片开通电流一致性的影响。最后,提出了一种可以改善各并联芯片开通电流一致性的双针+双层PCB板的驱动结构,并分析了该结构的均流效果。
[Abstract]:For IGBT devices with voltages, the parasitic parameters caused by encapsulation structure will cause the current distribution of parallel IGBT chips to be inconsistent during the transient process of switching on. Part of the chip in the switching transient process of the current overshoot is too large, thus reducing the turn-on performance, using parasitic parameters extraction, circuit modeling and simulation and experimental verification method. Firstly, under the condition of the same driving circuit parameters of the parallel chip of IGBT devices, the effect of emitter configuration on the on-off current consistency of the parallel chip is studied. Second, the influence of the configuration of the emitter on the on-off current of the parallel chip is studied. In the case of complete symmetry of the emitter beam layout, the effect of the asymmetric grid PCB board layout on the on-off current consistency of the parallel chips is studied. This paper presents a dual needle double layer PCB driver structure which can improve the on-off current consistency of the parallel chips and analyzes the current-sharing effect of the structure.
【作者单位】：新能源电力系统国家重点实验室(华北电力大学);全球能源互联网研究院;
【基金】：国家科技重大专项集成电路专项(2015ZX02301) 国家自然科学基金项目(51477048) 国家能源应用技术研究及示范工程项目(NY20150705) 中央高校基本科研业务费专项资金资助(JB2016112)~~
【分类号】：TN322.8
【正文快照】： Technology Research And Engineering Demonstration Project(NY20150705).Project Supported by the Fundamental Research Funds forthe Central Universities(JB2016112).验验证的方法,首先在压接式IGBT器件各并联芯片驱动回路参数一致的条件下,研究了发射极凸台布局对并

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