栅控功率器件过渡区可靠性的研究

发布时间：2018-01-27 11:52

本文关键词： 栅控功率半导体器件过渡区终端可靠性感性负载过流失效　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：目前,栅控功率器件作为主流功率开关器件被广泛应用于电磁加热、机车牵引、智能电网等电力电子领域。而MOSFET(金属氧化物半导体场效应晶体管)与IGBT(绝缘栅双极型晶体管)作为栅控功率器件的两大主流器件,其发展代表着功率器件发展的主流方向。然而,随着栅控功率半导体器件向着更大功率以及更高频率的方向发展,对其可靠性也提出了更为苛刻的指标和要求。众多失效模式也在应用中凸显出来,其中一种便是栅控功率器件过渡区在感性负载下的过流关断失效。为此,本文在国外相关论文的研究基础之上,结合仿真分析,针对过渡区过流失效进行了更深入的研究,另一目的也是为了引起国内相关企业和研究机构对功率器件可靠性研究的重视。本论文工作包含以下几个方面:1、首先借助TCAD软件,通过仿真确定了栅控功率器件过渡区在感性负载下过流关断过程中的热失效情况。并详细讨论关断过程中过渡区内部的物理参数如电流、电压以及温度的动态变化情况。2、从器件物理层面揭示过渡区感性负载下关断过程中过流失效的原因,并分析了过渡区内局部电流聚集引起的温升以及动态雪崩等现象。3、在上述基础之上,提出了过渡区在过流关断过程中的二维热传导模型,通过分析得出了过渡区在温升上升阶段流进的电流作恒流处理的思路,从而简化了对热模型温度的求解。4、针对过渡区局部过热现象,结合现有工艺平台,提出了一款RC-IGBT终端结构方案,经优化后该结构可以显著缓解过渡区局部的电流集中从而有效改善热应力过大的影响,为下一步的流片验证提供理论与技术支持。
[Abstract]:At present, gate controlled power devices as mainstream power switch devices are widely used in electromagnetic heating, locomotive traction. MOSFET (Metal oxide Semiconductor Field effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are the two main devices of gate controlled power devices. Its development represents the mainstream direction of power device development. However, with the development of gate controlled power semiconductor devices towards higher power and higher frequency direction. Many failure modes are also highlighted in application, one of which is the overcurrent turn-off failure in the transition region of gate controlled power devices under inductive load. In this paper, based on the research of foreign related papers, combined with simulation analysis, overcurrent failure in transition zone is studied more deeply. Another purpose is to attract the attention of domestic enterprises and research institutions on the reliability of power devices. The work of this paper includes the following aspects: 1, first of all, with the help of TCAD software. The thermal failure of the transition region of the gate controlled power device during the process of overcurrent turn-off under inductive load is determined by simulation, and the physical parameters such as current in the transition region during the turn-off process are discussed in detail. The dynamic change of voltage and temperature. 2. From the physical level of the device, the cause of overcurrent failure during the process of switching off the inductive load in the transition zone is revealed. Based on the analysis of temperature rise and dynamic avalanche caused by local current accumulation in the transition zone, a two-dimensional heat conduction model for the transition region during the process of overcurrent turn-off is proposed. Through the analysis, the idea of the constant current treatment of the current in the transition zone in the rising stage of temperature rise is obtained, which simplifies the solution of the temperature of the thermal model .4. aiming at the local overheating phenomenon in the transition zone, combined with the existing process platform. A scheme of RC-IGBT terminal structure is proposed. After optimization, the local current concentration in the transition region can be significantly alleviated, and the effect of excessive thermal stress can be effectively improved. Provide theoretical and technical support for the next step of flow verification.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8

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