基于黑硅材料的Si-APD功能仿真研究

发布时间：2018-01-28 07:46

本文关键词： 黑硅 Si-APD光电探测器仿真响应度近红外　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：硅是地球上储量最为丰富的半导体材料,且易于提纯、成本较低,在半导体器件中得到了广泛的应用,相关的技术已经非常成熟。然而,单晶硅材料的禁带宽度较大(1.1e V),无法有效吸收波长较长的光波。因而,需要研制具有较高响应度和宽光谱响应范围的新型硅光电探测器。黑硅材料具有特殊的表面形貌结构,对可见光有极高的光学吸收,且具有良好的宽光谱吸收特性,可用于光电探测器、太阳能电池及其它光电器件。本文阐述了硅基APD光电探测器的工作原理,介绍了器件的特性参数,对黑硅具有高的光吸收率和宽光谱吸收范围的原因,进行了理论分析。在理论研究与结构设计的基础上,首先对传统硅APD光电探测器进行了仿真研究,观察了器件的电场分布,并对I-V特性、光谱特性、响应时间和雪崩倍增因子等功能特性,进行了仿真分析。在传统硅APD光电探测器仿真研究的基础上,在N+层上制备黑硅层,进行了基于黑硅材料的APD光电探测器的仿真研究,器件结构为N+PπP+。结果表明:1)以N+层为光敏区的器件比以P+层为光敏面的器件具有更高的响应度,黑硅探测器对于可见光和近红外光都具有高的响应度;2)以N+层作为光敏区的器件主要性能参数为:雪崩电压-116V左右;雪崩倍增因子M=21.8时,器件响应度R为9A/W左右(@1.1μm);器件暗电流大小为10p A量级,响应时间为10ns量级,暗电流和响应时间与传统硅APD光电探测器相比量级保持不变;3)器件的响应度随尖锥结构纵横比的增大而增大,N+黑硅层掺杂浓度越高,其光响应度越高;4)雪崩击穿电压随着P区和π区掺杂浓度的增加而减小,随着π区厚度增大而增大;P区和π区掺杂浓度越高,雪崩倍增因子更容易提高,增加P区和π区厚度可以提高器件对红外波段的响应度。研究表明,基于黑硅材料的APD光电探测器,能在保持暗电流与响应时间无大范围变化的情况下,明显提高量子效率和响应度,且能够将探测器的光谱响应范围延展至近红外波段。
[Abstract]:Silicon is the most abundant semiconductor material on the earth, and easy to purify, low cost, has been widely used in semiconductor devices, related technology has been very mature. The monocrystalline silicon material has a wide bandgap of 1.1e V ~ (-1), which can not effectively absorb the light wave with longer wavelength. It is necessary to develop new silicon photodetectors with high responsivity and wide spectral response range. Black silicon materials have special surface morphology and high optical absorption to visible light. It can be used in photodetectors, solar cells and other optoelectronic devices. In this paper, the principle of silicon-based APD photodetectors is described, and the characteristic parameters of the devices are introduced. The reason why black silicon has high absorption rate and wide spectral absorption range is analyzed theoretically. On the basis of theoretical research and structural design, the traditional silicon APD photodetectors are studied by simulation. The electric field distribution of the device is observed, and the characteristics of I-V, spectrum, response time and avalanche multiplication factor are simulated and analyzed. The black silicon layer was prepared on the N layer, and the simulation of the APD photodetector based on the black silicon material was carried out. The structure of the device is N P 蟺 P. the result shows that the device with N layer as Guang Min region has a higher responsivity than that with P layer as Guang Min surface. Black silicon detectors have high responsivity to both visible and near-infrared light. 2) taking N layer as the main performance parameter of Guang Min: avalanche voltage is about -116V; When the avalanche multiplication factor M = 21.8, the responsivity R is about 9A / W and 1.1 渭 m. The dark current of the device is 10 Pa and the response time is 10 ns. Compared with the conventional silicon APD photodetector, the dark current and response time remain the same. 3) the higher the doping concentration of N black silicon layer, the higher the optical response of the device with the increase of the aspect ratio of the spinel structure. 4) the avalanche breakdown voltage decreases with the increase of doping concentration in P region and 蟺 region, and increases with the increase of 蟺 region thickness. The higher the doping concentration of P region and 蟺 region, the easier to increase the avalanche multiplication factor. Increasing the thickness of P region and 蟺 region can improve the responsivity of the device to infrared band. The research shows that the APD photodetector based on black silicon material. The quantum efficiency and responsivity of the detector can be improved obviously without large range change of dark current and response time, and the spectral response range of the detector can be extended to near infrared band.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12;TN36

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