一种大功率高效率的Ku波段SiGe硅功率放大器设计

发布时间：2018-01-31 07:45

  本文关键词： SiGe 异质结双极晶体管 功率放大器 变压器 Stack结构　出处：《固体电子学研究与进展》2017年04期 　论文类型：期刊论文

【摘要】：采用SiGe BiCMOS工艺设计了一款大功率高效率硅基功率放大器芯片,用于驱动现有大功率GaN功率放大器芯片,满足相控阵雷达的低成本需求。该硅基功率放大器通过和低噪声放大器、驱动放大器、数控移相器、数控衰减器、单刀双掷开关、电源管理以及数字逻辑单元等硅基电路进一步集成,实现了一片式高集成度硅基幅相多功能芯片,从而降低了前端收发组件的尺寸和成本。在硅基功率放大器设计中,结合Stack结构、变压器耦合结构和有源偏置结构,开展电路设计及优化,提高了放大器的输出功率和效率。测试结果表明:研制的硅基功率放大器在Ku波段f_1~f_2(3GHz带宽)频带内,实现了小信号增益31dB;在-3dBm输入功率条件下,实现发射功率21.5dBm、功率附加效率(PAE)25%等技术指标。集成功率放大器的幅相多功能芯片在f_1~f_2(3GHz带宽)频带内,实现了发射通道增益24dB;在5dBm输入功率条件下发射功率21.5dBm、功率附加效率(PAE)23%等技术指标。
[Abstract]:A high power and high efficiency silicon based power amplifier chip is designed using SiGe BiCMOS technology to drive the existing high power GaN power amplifier chip. The silicon based power amplifier passes through low noise amplifier, drive amplifier, numerical control phase shifter, numerical control attenuator, single pole double throw switch. Power management, digital logic unit and other silicon-based circuits are further integrated to achieve a high integrated silicon based amplitude and phase multifunctional chip. In order to reduce the size and cost of the front-end transceiver module, the circuit design and optimization are carried out by combining the Stack structure, transformer coupling structure and active bias structure in the design of silicon-based power amplifier. The output power and efficiency of the amplifier are improved. The test results show that the small signal gain of the silicon-based power amplifier is 31dBin in the Ku-band f1s / fstack / 2GHz / 3GHz bandwidth. Under the condition of -3dBm input power, the transmission power is 21.5 dBm. The amplitude-phase multifunctional chip of the integrated power amplifier can achieve the gain of 24 dB in the frequency band of f1 / fstack / 2GHz / 3GHz. Under the condition of 5 dBm input power, the transmission power is 21.5dBm, and the additional power efficiency is 23%.
【作者单位】： 南京电子器件研究所;
【分类号】：TN722.75
【正文快照】： 引言随着相控阵雷达系统在军事领域和民用领域大量的应用,如何降低相控阵所需求的数量庞大的T/R组件成本是目前面临的难题。硅基工艺具备制作高集成度、低成本射频微波芯片的能力[1]。为了使得硅基射频芯片能够直接驱动后端大功率GaN功率放大器,以满足低成本小型化相控阵系统，

本文编号：1478620