一种高精度超低功耗基准电压源

发布时间：2018-02-02 04:35

  本文关键词： 亚阈值区 高精度 高电源电压抑制比 超低功耗 低温漂　出处：《微电子学》2017年02期 　论文类型：期刊论文

【摘要】：提出了一种超低功耗、无BJT的基于亚阈值CMOS特性的基准电压源。采用正负温度系数电流求和的方式来获得与温度无关的电流,再转换成基准电压;采用共源共栅电流镜来提高电源电压抑制比和电压调整率。基于SMIC 0.18μm CMOS工艺进行仿真,结果表明,在-20℃~135℃温度范围内,温漂系数为2.97×10~(-5)/℃;在0.9~3.3V电源电压范围内,电压调整率为0.089%;在频率为100Hz时,电源电压抑制比为-74dB,电路功耗仅有230nW。
[Abstract]:An ultra-low power, BJT free reference voltage source based on subthreshold CMOS characteristics is proposed. The temperature independent current is obtained by summing positive and negative temperature coefficient currents and then converted to reference voltage. The power supply voltage rejection ratio and voltage adjustment rate are improved by using the common grid current mirror. The simulation results based on SMIC 0.18 渭 m CMOS process show that the temperature drift coefficient is 2.97 脳 10 ~ (-5) / 鈩，

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