多胞MOSFET器件小信号模型参数提取和灵敏度分析

发布时间：2018-02-02 05:12

本文关键词： MOSFET 小信号建模参数提取灵敏度分析蒙特卡洛方法　出处：《华东师范大学》2017年硕士论文　论文类型：学位论文

【摘要】：MOSFET(金属氧化物半导体场效应晶体管)以其特有的功耗低、工艺成熟、集成度高以及与模拟电路的耦合性良好等优势在射频集成电路中充当着不可或缺的角色。在设计研制电路时,为了缩短研发时间和降低研发成本,利用器件模型代替实物以模拟电路性能是个很有效的途径。同时电路的设计与仿真必然要用到计算机辅助软件,软件中所使用的内嵌器件模型的准确度也很大程度地影响着电路设计的结果。本文的研究工作主要围绕90纳米MOSFET器件等效电路模型的建立展开,深入研究了 MOSFET器件的小信号模型及其相关理论,回顾了集成电路和半导体器件的发展,在当前MOSFET模型的理论基础上,提出了对MOSFET器件建模技术的改良提高。本文的主要研究工作包括:1)对MOSFET器件建模流程和小信号模型参数的提取流程进行了阐述;2)在对MOSFET器件去嵌过程中,提出了改进创新的测试结构短路模型,相应的开路短路去嵌过程相较于传统去嵌方法也有所不同。采用新的去嵌方法提取出的创新型测试结构短路模型的精度比传统模型有了很大的改善和提高。并将其应用于4×0.6μm(栅指数×栅宽)、栅长为90nm并且由18个元胞构成的MOSFET器件建模上,获得的器件模型在准确度上较之传统模型也有所提高;3)在器件单胞模型的基础上,提出了符合器件真实物理结构的多胞模型,并应用于8×0.6μm(栅指数×栅宽)、栅长为90nm、由12个元胞构成的MOSFET器件上,获得的等效电路模型更加贴近实验测量数据结果,其模型能够更加准确地预测MOSFET的行为;4)以单胞模型为研究对象,分析电路模型本征部分中各个元件的灵敏度。应用蒙特卡洛方法对各个元件灵敏度进行仿真验证,证明元件灵敏度的准确性,并从敏感度方面考察电路模型的稳定性。
[Abstract]:MOSFET (Metal oxide Semiconductor Field effect Transistor) has low power consumption and mature technology. The advantages of high integration and good coupling with analog circuits play an indispensable role in RF integrated circuits. In order to shorten the R & D time and reduce the R & D costs in the design and development of circuits. It is an effective way to use the device model instead of the physical object to simulate the circuit performance. At the same time, the design and simulation of the circuit must use computer aided software. The accuracy of embedded device model used in software also greatly affects the results of circuit design. The research work in this paper mainly revolves around the establishment of equivalent circuit model of 90 nanometer-sized MOSFET devices. The small signal model and its related theories of MOSFET devices are studied in depth. The development of integrated circuits and semiconductor devices is reviewed. Based on the current MOSFET model theory. The main research work in this paper includes: (1) the modeling process of MOSFET device and the extraction process of small signal model parameters are described. 2) in the process of removing MOSFET devices, an improved and innovative short circuit model of test structure is proposed. The corresponding open-circuit short-circuit de-embedding process is also different from the traditional de-embedding method. The precision of the innovative test structure short-circuit model extracted by the new de-embedding method has been greatly improved and improved compared with the traditional model. It was applied to 4 脳 0.6 渭 m (. Gate index 脳 gate width). When the gate length is 90 nm and the MOSFET device is composed of 18 cells, the accuracy of the device model obtained is also improved compared with the traditional model. 3) based on the unit cell model of the device, a polycell model which accords with the real physical structure of the device is proposed and applied to 8 脳 0.6 渭 m (gate index 脳 gate width, gate length 90 nm). On MOSFET devices composed of 12 cells, the equivalent circuit model obtained is closer to the experimental data, and the model can predict the behavior of MOSFET more accurately. 4) taking the unit cell model as the research object, the sensitivity of each component in the intrinsic part of the circuit model is analyzed, and the sensitivity of each component is verified by Monte Carlo method, which proves the accuracy of the element sensitivity. The stability of the circuit model is investigated from the sensitivity aspect.
【学位授予单位】：华东师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386

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